FL8205
DUAL N-CHANNEL ENHANCEMENT MODE FET
FEATURES
Ultra low on-resistance:VDS=20V,ID=5A,RDS(ON)≤24mΩ@VGS=4.5V
Low gate charge
ESD protected
Surface Mount device
TSSOP-8
MECHANICAL DATA
Case: TSSOP-8
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: not available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current TA = 25°C
Pulsed drain current(Note 1)
Symbol
Value
Unit
V
DS
20
V
V
VGS
ID
IDM
PD
PD
±12
5.5
20
A
A
TA = 25°C
TA = 70°C
2.0
W
Power dissipation
1.6
W
Thermal resistance from Junction to ambient (Note 2)
Thermal resistance from Junction to case(Note 2)
Junction and Storage temperature
Rθ
Rθ
TJ,TSTG
JA
78
°C/W
°C/W
°C
JC
40
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Off Characteristics
Symbol
Min
Typ
Max
Unit
Conditions
VGS=0V, ID=250μA
V(BR)DSS*
Drain-Source breakdown voltage
Zero gate voltage drain current
20
V
1
5
±100
μA VDS=20V,
μA VDS=20V,
IDSS
*
*
nA VDS=0V,
VGS=±12V
Gate-body leakage current
On Characteristics (Note 3)
IGSS
Gate-threshold voltage
VGS(th)
*
0.55
0.95
24
32
V
VDS=VGS, ID=250μA
17.5
22
10
mΩ VGS=4.5V, ID=5A
mΩ
S
Drain-source on-resistance
RDS(ON)*
V =2.5V, I =4A
VDS=5V, ID=4.5A
VDS=5V,VGS=4.5V
GS
D
Forward transconductance
On-state Drain Current
Drain-Source Diode Characteristics
gFS
ID(ON)
15
5
A
Diode forward voltage
Diode forward current
Dynamic Characteristics (Note4)
VSD
IS
0.75
1.2
V
A
IS=4.5A, VGS=0V
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching Characteristics (Note 4)
Ciss
Coss
Crss
700
175
85
pF
pF
pF
VDS=10V, VGS=4.5V, f=1MHz
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
td(on)
tr
7
1.2
1.9
8
10
18
5
10
nC
nC
nC
nS
nS
nS
nS
VGS=4.5V,VDS=10V,ID=3A
16
18
29
10
VGS=4.5V, VDS=10V,
td(off)
tf
ID=1A,RGEN=6Ω
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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