Datasheet > 80-M112PMA010M7-K209A7

80-M112PMA010M7-K209A7

更新时间： 2023-09-03 20:25:03

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	2827K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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80-M112PMA010M7-K209A7 数据手册

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80-M112PMA010M7-K209A70

datasheet

MiniSKiiP^®PIM 1

1200 V / 10 A

MiniSkiip^®1 housing

Features

● IGBT M7 with low V _CEsatand improved EMC behavior

● Open emitter configuration

● Solder-free spring contact technology

● Built-in PTC

Schematic

Target applications

● Industrial Drives

Types

● 80-M112PMA010M7-K209A70

Maximum Ratings

= 25 °C, unless otherwise specified

Parameter

Symbol

Condition

Value

Unit

Rectifier Diode

V_RRM

I_F

I_FSM

I²t

P_tot

T_jmax

Peak Repetitive Reverse Voltage

1600

Continuous (direct) forward current

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

200

50 Hz Single Half Sine Wave

t_p= 10 ms

A²s

°C

Total power dissipation

T_j= T_jmax

Maximum Junction Temperature

150

27 Oct. 2017 / Revision 1

12 3 4 5 6 7...32

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