是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.82 | 雪崩能效等级(Eas): | 530 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 7.4 A |
最大漏源导通电阻: | 1.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 29.6 A | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
7N60L-TF3-T-R | UTC |
获取价格 |
Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal | |
7N60L-TF3T-T | UTC |
获取价格 |
Power Field-Effect Transistor | |
7N60L-TQ2-R | UTC |
获取价格 |
7.4A, 600V N-CHANNEL POWER MOSFET | |
7N60L-TQ2-T | UTC |
获取价格 |
7.4A, 600V N-CHANNEL POWER MOSFET | |
7N60L-X-T2Q-T | UTC |
获取价格 |
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | |
7N60L-X-TA3-T | UTC |
获取价格 |
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | |
7N60L-X-TF1-T | UTC |
获取价格 |
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | |
7N60L-X-TF3-T | UTC |
获取价格 |
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | |
7N60L-X-TQ2-R | UTC |
获取价格 |
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | |
7N60L-X-TQ2-T | UTC |
获取价格 |
7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |