Datasheet > 7N60

7N60

更新时间： 2024-09-26 18:09:51

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
8页	1595K
描述
TO-252

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数据手册

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7N60 数据手册

7N60 7N65

N-CHANNEL HIGH VOLTAGE MOSFET

FEATURES

R_DS(ON)= 1.0Ω @V_GS= 10 V



R_DS(ON)= 1.2Ω @V_GS= 10 V

Ultra Low Gate Charge (Typical 29 nC )

Low Reverse Transfer Capacitance ( C_RSS= typical 16pF )

Fast Switching Capability

Avalanche Energy Tested

Improved dv/dt Capability, High Ruggedness



TO-252

MECHANICAL DATA



Case: TO-252

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.33 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DSS

RATINGS

600

UNIT

7N60

7N65

650

Gate-Source Voltage

V_GSS

I_AR

±30

Avalanche Current (Note 2)

7.0

Continuous

Pulsed (Note 2)

I_D

7.0

29.6

530

V/ns

Drain Current

I_DM

Single Pulsed (Note 3)

Repetitive (Note 2)

E_AS

E_AR

dv/dt

P_D

Avalanche Energy

14.2

Peak Diode Recovery dv/dt (Note 4)

(T = 25°С)

4.5

142

Power Dissipation

Junction Temperature

Ambient Operating Temperature

Storage Temperature

T_J

+150

-55 ~ +150

160

°С

T_OPR

°С

T_STG

θ_JA

°С

°C/W

Junction to Ambient

θ_JC

Junction to Case

2.5

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L=64mH, I_AS=7.0A, V_DD=50V, R_G=25 Ω, Starting T_J= 25°C

4. I_SD≤7.0A, di/dt≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

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