Datasheet > 7N60

7N60

更新时间： 2024-09-25 08:06:31

品牌	Logo	应用领域
伊泰克 - ESTEK		/
页数	文件大小	规格书
5页	352K
描述
7 Amps，600Volts N-Channel MOSFET

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7N60 数据手册

7N60

7 Amps，600Volts

N-Channel MOSFET

■ Description

The ET7N60 NꢀChannel enhancement mode silicon gate power

MOSFET is designed for high voltage, high speed power switching

applications such as switching regulators, switching converters,

solenoid, motor drivers, relay drivers

■ Features

ꢀ

R_DS(ON)= 1.20ꢁ@V_GS= 10 V

Low gate charge ( typical 29nC)

High ruggedness

Fast switching capability

Avalanche energy specified

Improved dv/dt capability

■ Symbol

■ Absolute Maximum Ratings(T_c=25℃,unless otherwise specified)

Ratings

Parameter

Symbol

Units

TOꢀ220

TOꢀ220F

DrainꢀSource Voltage

GateꢀSource Voltage

V_DSS

V_GSS

600

±30

T_c=25℃

7.0

4.3

7.0^＊

4.3^＊

28^＊

Drain Currenet Continuous

I_D

T_c=100℃

Drain Current Pulsed

Avalanche Energy

(Note 1)

I_DP

E_AR

E_AS

Repetitive

15.2

267

4.5

V/ns

Single Pulse (Note 2)

(Note 3)

Peak Diode Recovery dv/dt

Total Power Dissipation

dv/dt

T_c=25℃

152

P_D

Derate above 25℃

1.21

0.40

W/℃

℃

Junction Temperature

T_J

+150

ꢀ55~+150

Storage Temperature

T_STG

℃

^＊Drain current limited by maximum junction temperature.

BEIJING ESTEK ELECTRONICS CO.,LTD

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