Datasheet > 7N60

7N60

更新时间： 2024-09-25 06:32:19

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	239K
描述
N-Channel Mosfet Transistor

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7N60 数据手册

INCHANGE Semiconductor

isc Product Specification

isc N-Channel Mosfet Transistor

7N60

·FEATURES

·Drain Current –I_D= 7A@ T_C=25℃

·Drain Source Voltage-

: V_DSS= 600V(Min)

·Static Drain-Source On-Resistance

: R_DS(on)= 1.0Ω(Max)

·Avalanche Energy Specified

·Fast Switching

·Simple Drive Requirements

·DESCRITION

·Designed for high efficiency switch mode power supply.

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

600

UNIT

Drain-Source Voltage

Gate-Source Voltage-Continuous

Drain Current-Continuous

±20

I_DM

Drain Current-Single Plused

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

P_D

125

℃

150

T_j

-55~150

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.0

UNIT

℃/W

R_{th j-c}

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_{th j-a}

62.5

isc Website：www.iscsemi.cn

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