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7MBR50VP120-50 PDF预览

7MBR50VP120-50

更新时间: 2024-09-09 08:06:31
品牌 Logo 应用领域
富士电机 - FUJI 晶体晶体管功率放大器双极性晶体管局域网
页数 文件大小 规格书
8页 749K
描述
IGBT MODULE

7MBR50VP120-50 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-XUFM-X26针数:26
Reach Compliance Code:unknown风险等级:5.71
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):50 A集电极-发射极最大电压:1200 V
配置:COMPLEXJESD-30 代码:R-XUFM-X26
元件数量:7端子数量:26
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER AMPLIFIER晶体管元件材料:SILICON
标称断开时间 (toff):590 ns标称接通时间 (ton):480 ns
Base Number Matches:1

7MBR50VP120-50 数据手册

 浏览型号7MBR50VP120-50的Datasheet PDF文件第2页浏览型号7MBR50VP120-50的Datasheet PDF文件第3页浏览型号7MBR50VP120-50的Datasheet PDF文件第4页浏览型号7MBR50VP120-50的Datasheet PDF文件第5页浏览型号7MBR50VP120-50的Datasheet PDF文件第6页浏览型号7MBR50VP120-50的Datasheet PDF文件第7页 
7MBR50VP120-50  
IGBT MODULE (V series)  
1200V / 50A / PIM  
IGBT Modules  
Features  
Low VCE(sat)  
Compact Package  
P.C.Board Mount Module  
Converter Diode Bridge Dynamic Brake Circuit  
RoHS compliant product  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)  
Maximum  
ratings  
Items  
Symbols  
Conditions  
Units  
Collector-Emitter voltage  
V
CES  
GES  
1200  
±20  
V
V
Gate-Emitter voltage  
Collector current  
V
Ic  
Continuous  
1ms  
Tc=80°C  
Tc=80°C  
50  
Icp  
100  
A
-Ic  
50  
-Ic pulse  
Pc  
1ms  
100  
Collector power dissipation  
Collector-Emitter voltage  
Gate-Emitter voltage  
1 device  
280  
W
V
VCES  
1200  
±20  
VGES  
V
I
I
C
Continuous  
1ms  
Tc=80°C  
Tc=80°C  
35  
Collector current  
A
CP  
70  
Collector power dissipation  
Repetitive peak reverse voltage (Diode)  
Repetitive peak reverse voltage  
Average output current  
P
C
1 device  
210  
W
V
VRRM  
VRRM  
1200  
1600  
50  
V
I
I
O
50Hz/60Hz, sine wave  
A
Surge current (Non-Repetitive)  
I2t (Non-Repetitive)  
FSM  
360  
A
A2s  
10ms, Tj=150°C  
half sine wave  
I2t  
648  
Inverter, Brake  
Converter  
175  
Junction temperature  
Tj  
150  
Inverter, Brake  
Converter  
150  
Operating junciton temperature  
(under switching conditions)  
Tjop  
°C  
150  
Case temperature  
Tc  
125  
Storage temperature  
Tstg  
-40 to +125  
between terminal and copper base (*1)  
between thermistor and others (*2)  
Isolation voltage  
Screw torque  
V
iso  
AC : 1min.  
M5  
2500  
3.5  
VAC  
N m  
Mounting (*3)  
-
Note *1: All terminals should be connected together during the test.  
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.  
Note *3: Recommendable value : 2.5-3.5 Nm (M5)  
1

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