是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X26 | 针数: | 26 |
Reach Compliance Code: | unknown | 风险等级: | 5.71 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 50 A | 集电极-发射极最大电压: | 1200 V |
配置: | COMPLEX | JESD-30 代码: | R-XUFM-X26 |
元件数量: | 7 | 端子数量: | 26 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER AMPLIFIER | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 590 ns | 标称接通时间 (ton): | 480 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
7MBR50VR120-50 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, CO |
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7MBR50VW120-50 | FUJI |
获取价格 |
IGBT MODULE |
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7MBR50VX120-50 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PAC |
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7MBR50VY060-50 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACK |
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7MBR50VY120-50 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PAC |
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7MBR50VZ120-50 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PAC |
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7MBR50XKB065-50 | FUJI |
获取价格 |
PIM(conv.+Brake+inv.) M731 |
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7MBR50XKD065-50 | FUJI |
获取价格 |
PIM(conv.+Brake+inv.) M733 |
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7MBR50XMA065-50 | FUJI |
获取价格 |
PIM(conv.+Brake+inv.) M719 |
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7MBR50XMA120-50 | FUJI |
获取价格 |
PIM(conv.+Brake+inv.) M719 |
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