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7MBR50VN120-50 PDF预览

7MBR50VN120-50

更新时间: 2024-01-28 09:02:34
品牌 Logo 应用领域
富士电机 - FUJI 局域网功率控制晶体管
页数 文件大小 规格书
8页 491K
描述
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, COMPACT PACKAGE-35

7MBR50VN120-50 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-XUFM-X22针数:35
Reach Compliance Code:unknown风险等级:5.71
外壳连接:ISOLATED最大集电极电流 (IC):50 A
集电极-发射极最大电压:1200 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X22
元件数量:7端子数量:22
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):530 ns标称接通时间 (ton):390 ns
VCEsat-Max:2.65 VBase Number Matches:1

7MBR50VN120-50 数据手册

 浏览型号7MBR50VN120-50的Datasheet PDF文件第2页浏览型号7MBR50VN120-50的Datasheet PDF文件第3页浏览型号7MBR50VN120-50的Datasheet PDF文件第4页浏览型号7MBR50VN120-50的Datasheet PDF文件第5页浏览型号7MBR50VN120-50的Datasheet PDF文件第6页浏览型号7MBR50VN120-50的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
IGBT Modules  
7MBR50VN120-50  
IGBT MODULE (V series)  
1200V / 50A / PIM  
Features  
Low VCE(sat)  
Compact Package  
P.C.Board Mount Module  
Converter Diode Bridge Dynamic Brake Circuit  
RoHS compliant product  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)  
Maximum  
ratings  
Items  
Symbols  
Conditions  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
V
CES  
GES  
1200  
±20  
50  
V
V
Ic  
Continuous  
1ms  
Tc=80°C  
Tc=80°C  
Icp  
100  
50  
Collector current  
A
-Ic  
-Ic pulse  
Pc  
1ms  
100  
280  
1200  
±20  
35  
Collector power dissipation  
Collector-Emitter voltage  
Gate-Emitter voltage  
1 device  
W
V
V
V
CES  
GES  
V
I
C
Continuous  
1ms  
Tc=80°C  
Tc=80°C  
Collector current  
A
ICP  
70  
Collector power dissipation  
Repetitive peak reverse voltage (Diode)  
Repetitive peak reverse voltage  
Average output current  
P
V
V
C
1 device  
210  
1200  
1600  
50  
W
V
RRM  
RRM  
V
I
O
50Hz/60Hz, sine wave  
A
Surge current (Non-Repetitive)  
I2t (Non-Repetitive)  
I
FSM  
360  
648  
175  
150  
150  
150  
125  
-40~+125  
A
A2s  
10ms, Tj=150°C  
half sine wave  
I2t  
Tj  
Inverter, Brake  
Converter  
Junction temperature  
Inverter, Brake  
Converter  
Operating junciton temperature  
(under switching conditions)  
Tjop  
°C  
Case temperature  
Tc  
Storage temperature  
Tstg  
between terminal and copper base (*1)  
between thermistor and others (*2)  
Isolation voltage  
Screw torque  
V
iso  
AC : 1min.  
M5  
2500  
3.5  
VAC  
N m  
Mounting (*3)  
-
Note *1: All terminals should be connected together during the test.  
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.  
Note *3: Recommendable value : 2.5-3.5 Nm (M5)  
1

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