Datasheet > 7MBR50VM120-50

7MBR50VM120-50

更新时间： 2024-02-10 16:01:26

品牌	Logo	应用领域
富士电机 - FUJI		双极性晶体管
页数	文件大小	规格书
8页	742K
描述
IGBT MODULE

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

7MBR50VM120-50 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	FLANGE MOUNT, R-XUFM-X21	针数：	23
Reach Compliance Code：	unknown	风险等级：	5.82
外壳连接：	ISOLATED	最大集电极电流 (IC)：	50 A
集电极-发射极最大电压：	1200 V	配置：	COMPLEX
JESD-30 代码：	R-XUFM-X21	元件数量：	7
端子数量：	21	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	UNSPECIFIED	端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	POWER CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	530 ns
标称接通时间 (ton)：	390 ns

7MBR50VM120-50 数据手册

7MBR50VM120-50

IGBT MODULE (V series)

1200V / 50A / PIM

IGBT Modules

Features

Low V_CE(sat)

Compact Package

P.C.Board Mount Module

Converter Diode Bridge Dynamic Brake Circuit

RoHS compliant product

Applications

Inverter for Motor Drive

AC and DC Servo Drive Ampliﬁer

Uninterruptible Power Supply

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Maximum

ratings

Items

Symbols

Conditions

Units

Collector-Emitter voltage

CES

GES

1200

±20

Gate-Emitter voltage

Collector current

Continuous

1ms

Tc=80°C

Icp

100

-Ic

-Ic pulse

1ms

100

Collector power dissipation

Collector-Emitter voltage

Gate-Emitter voltage

1 device

280

VCES

1200

±20

VGES

Continuous

1ms

Tc=80°C

Collector current

Collector power dissipation

Repetitive peak reverse voltage (Diode)

Repetitive peak reverse voltage

Average output current

1 device

210

VRRM

1200

1600

50Hz/60Hz, sine wave

Surge current (Non-Repetitive)

I²t (Non-Repetitive)

FSM

360

A²s

10ms, Tj=150°C

half sine wave

I²t

648

Inverter, Brake

Converter

175

Junction temperature

150

Inverter, Brake

Converter

150

Operating junciton temperature

(under switching conditions)

Tjop

°C

150

Case temperature

125

Storage temperature

Tstg

-40 to +125

between terminal and copper base (*1)

between thermistor and others (*2)

Isolation voltage

Screw torque

iso

AC : 1min.

2500

3.5

VAC

N m

Mounting (*3)

Note *1: All terminals should be connected together during the test.

Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.

Note *3: Recommendable value : 2.5-3.5 Nm (M5)

12 3 4 5 6 7 8

下载PDF

与7MBR50VM120-50相关器件

型号	品牌	描述	获取价格	数据表
7MBR50VN120-50	FUJI	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, CO	获取价格
7MBR50VP060-50	FUJI	IGBT MODULE	获取价格
7MBR50VP120-50	FUJI	IGBT MODULE	获取价格
7MBR50VR120-50	FUJI	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, CO	获取价格
7MBR50VW120-50	FUJI	IGBT MODULE	获取价格
7MBR50VX120-50	FUJI	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PAC	获取价格