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7MBR30SC060 PDF预览

7MBR30SC060

更新时间: 2024-11-11 03:09:19
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富士电机 - FUJI 转换器栅极触发装置可控硅整流器双极性晶体管局域网
页数 文件大小 规格书
7页 429K
描述
PIM/Built-in converter with thyristor and brake (S series) 600V / 30A / PIM

7MBR30SC060 技术参数

生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X26针数:26
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.73外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN THREE PHASE DIODE BRIDGE, IGBT AND THERMISTOR最大直流栅极触发电流:100 mA
JESD-30 代码:R-XUFM-X26元件数量:1
端子数量:26最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:47.1 A
断态重复峰值电压:800 V重复峰值反向电压:800 V
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

7MBR30SC060 数据手册

 浏览型号7MBR30SC060的Datasheet PDF文件第2页浏览型号7MBR30SC060的Datasheet PDF文件第3页浏览型号7MBR30SC060的Datasheet PDF文件第4页浏览型号7MBR30SC060的Datasheet PDF文件第5页浏览型号7MBR30SC060的Datasheet PDF文件第6页浏览型号7MBR30SC060的Datasheet PDF文件第7页 
IGBT Modules  
7MBR30SC060  
PIM/Built-in converter with thyristor  
and brake (S series)  
600V / 30A / PIM  
Features  
· Low VCE(sat)  
· Compact Package  
· P.C. Board Mount Module  
· Converter Diode Bridge Dynamic Brake Circuit  
Applications  
· Inverter for Motor Drive  
· AC and DC Servo Drive Amplifier  
· Uninterruptible Power Supply  
Maximum ratings and characteristics  
Absolute maximum ratings (Tc=25°C unless without specified)  
Item  
Symbol  
VCES  
VGES  
IC  
Condition  
Rating  
Unit  
V
Collector-Emitter voltage  
Gate-Emitter voltage  
600  
±20  
30  
V
Continuous  
1ms  
A
Collector current  
60  
ICP  
A
30  
-IC  
A
Collector power disspation  
Collector-Emitter voltage  
Gate-Emitter voltage  
Collector current  
1 device  
120  
600  
±20  
20  
PC  
W
V
VCES  
VGES  
IC  
V
Continuous  
1ms  
A
40  
ICP  
A
Collector power disspation  
1 device  
80  
PC  
W
V
Repetitive peak reverse voltage(Diode)  
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
Average on-state current  
600  
800  
800  
30  
VRRM  
VDRM  
VRRM  
IT(AV)  
ITSM  
Tjw  
V
V
50Hz/60Hz sine wave  
A
Surge 0n-state current (Non-Repetitive)  
Junction temperature  
Tj=125°C, 10ms half sine wave  
275  
125  
800  
30  
A
°C  
V
Repetitive peak reverse voltage  
Average output current  
VRRM  
IO  
50Hz/60Hz sine wave  
Tj=150°C, 10ms  
A
Surge current (Non-Repetitive)  
210  
221  
IFSM  
I2t  
A
I2t  
(Non-Repetitive)  
A2s  
°C  
°C  
V
half sine wave  
Junction temperature (except Thyristor)  
Storage temperature  
+150  
Tj  
-40 to +125  
AC 2500  
AC 2500  
1.7 *1  
Tstg  
Isolation between terminal and copper base *2  
voltage between thermistor and others *3  
Mounting screw torque  
AC : 1 minute  
Viso  
V
N·m  
*1 Recommendable value : 1.3 to 1.7 N·m (M4)  
*2 All terminals should be connected together when isolation test will be done.  
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26  
should be connected together and shorted to copper base.  

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