生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X26 | 针数: | 26 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.73 | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN THREE PHASE DIODE BRIDGE, IGBT AND THERMISTOR | 最大直流栅极触发电流: | 100 mA |
JESD-30 代码: | R-XUFM-X26 | 元件数量: | 1 |
端子数量: | 26 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
认证状态: | Not Qualified | 最大均方根通态电流: | 47.1 A |
断态重复峰值电压: | 800 V | 重复峰值反向电压: | 800 V |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
7MBR30U2A060 | FUJI |
获取价格 |
IGBT MODULE (U series) 600V / 30A / PIM | |
7MBR30U2A-060(P) | ETC |
获取价格 |
IGBTs | |
7MBR30UA060 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
7MBR30UC060 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
7MBR30UE060 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
7MBR30UF060 | FUJI |
获取价格 |
Power Integrated Module | |
7MBR30VKA060-50 | FUJI |
获取价格 |
PIM(conv.+Brake+inv.) M726 | |
7MBR30VKC060-50 | FUJI |
获取价格 |
PIM(conv.+Brake+inv.) M728 | |
7MBR30XKA065-50 | FUJI |
获取价格 |
PIM(conv.+Brake+inv.) M730 | |
7MBR30XKC065-50 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, MODULE-23 |