Datasheet > 7MBR25UC120

7MBR25UC120

更新时间： 2024-11-11 21:03:31

品牌	Logo	应用领域
富士电机 - FUJI		栅
页数	文件大小	规格书
5页	295K
描述
Insulated Gate Bipolar Transistor,

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7MBR25UC120 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

7MBR25UC120 数据手册

U-series IGBT Modules (1,200 V)

Yuichi Onozawa

Shinichi Yoshiwatari

Masahito Otsuki

1. Introduction

tion voltage between the collector and emitter

(V_{CE (sat)}) and the turn-off loss of the newly developed

IGBT (trench FS-IGBT). From this figure, it can be

seen that the trade-off of the 1,200 V U-series IGBT is

dramatically improved compared to that of the former

generation S-series IGBT [planer NPT (non punch

Power conversion equipment such as general-use

inverters and uninterruptible power supplies (UPSs) is

continuously challenged by demands for higher effi-

ciency, smaller size, lower cost and lower noise.

Accordingly, power-converting elements for inverter

circuits are also required to have higher performance

and lower cost. At present, IGBTs (insulated gate

bipolar transistors) are the main power-converting

elements used because of their low loss and easy drive

circuit implementation. After commercializing the

IGBT in 1988, Fuji Electric has made efforts to

improve the IGBT in pursuit of lower loss and lower

cost. This paper introduces fifth generation IGBT

modules (U-series), and focuses on the 1,200 V series

used mainly in 400 V AC power lines overseas. Adop-

tion of a trench gate structure and a field stop (FS)

structure has resulted in a large improvement in the

trade-off characteristics of fifth generation IGBTs

compared with those of the fourth generation IGBT (S-

series).

through) -IGBT].

This dramatic improvement in

characteristics has been achieved through adopting a

field stop structure, evolved from an advanced NPT

configuration, and a trench gate structure, acquired

during development of MOSFETs (metal oxide semi-

conductor field effect transistors).

structures is described below.

Each of these

2.1 Field stop structure

Figure 2 shows output characteristics and Fig. 3

shows comparison of cross section of unit cells of a

planar NPT-IGBT and a planar FS-IGBT. An NPT-

IGBT requires a thick drift layer so that the depletion

layer does not contact the collector side during turn-off.

The FS-IGBT does not, however, require such a thick

drift layer as the NPT because a field stop layer to stop

the depletion layer has been fabricated in the FS-IGBT

and accordingly V_{CE (sat)}can be lowered for the FS-

IGBT. Furthermore, the FS-IGBT has fewer excess

carriers because of its thinner drift layer. Moreover,

2. Features of the New IGBTs

Figure 1 shows the trade-off relation of the satura-

Fig.1 Trade-off between V_{CE (sat)}and turn-off loss

Fig.2 Output characteristics

160

Room temperature

Trench FS-IGBT

Trench FS-IGBT 1,200 V/150 A

V_CC=600 V, I_C=150 A, V_G=+15 V/–15 V

125°C

120

125°C

Room

tempe-

temperature

Planar

NPT-IGBT

rature

125°C

Room

temperature

Trench

Planar NPT-IGBT

FS-IGBT

1.2

1.4

1.6

1.8

2.0

V_CE(sat)(V)

2.2

2.4

2.6

2.8

0.5

1.0

1.5

2.0

2.5

3.0

V_CE(sat)(V)

U-series IGBT Modules (1,200 V)

115

12 3 4 5

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与7MBR25UC120相关器件

型号	品牌	获取价格	描述	数据表
7MBR25VA120-50	FUJI	获取价格	PIM(conv.+Brake+inv.) M711
7MBR25VJB120-50	FUJI	获取价格	PIM(conv.+Brake+inv.)
7MBR25VJB120-53	FUJI	获取价格	PIM(conv.+Brake+inv.)
7MBR25VKB120-50	FUJI	获取价格	Insulated Gate Bipolar Transistor
7MBR25VKB120-50.pdf	FUJI	获取价格	PIM(conv.+Brake+inv.) M727
7MBR25VKD120-50	FUJI	获取价格	PIM(conv.+Brake+inv.) M729
7MBR25VM120-50	FUJI	获取价格	IGBT MODULE
7MBR25VP120-50	FUJI	获取价格	IGBT MODULE
7MBR25VW120-50	FUJI	获取价格	IGBT MODULE
7MBR25VY120-50	FUJI	获取价格	Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PAC

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