7MBR150VN120-50

更新时间： 2024-11-11 12:50:11

品牌	Logo	应用领域
富士电机 - FUJI		双极性晶体管
页数	文件大小	规格书
8页	831K
描述
IGBT MODULE

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中文翻译

获取价格

数据手册

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7MBR150VN120-50 数据手册

7MBR150VN120-50

IGBT MODULE (V series)

1200V / 150A / PIM

IGBT Modules

Features

Low V_CE(sat)

Compact Package

P.C.Board Mount Module

Converter Diode Bridge Dynamic Brake Circuit

RoHS compliant product

Applications

Inverter for Motor Drive

AC and DC Servo Drive Ampliﬁer

Uninterruptible Power Supply

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Maximum

ratings

Items

Symbols

Conditions

Units

Collector-Emitter voltage

CES

GES

1200

±20

Gate-Emitter voltage

Collector current

Continuous

1ms

Tc=80°C

150

Icp

300

-Ic

150

-Ic pulse

1ms

300

Collector power dissipation

Collector-Emitter voltage

Gate-Emitter voltage

1 device

885

CES

1200

±20

GES

Continuous

1ms

Tc=80°C

100

Collector current

200

Collector power dissipation

Repetitive peak reverse voltage (Diode)

Repetitive peak reverse voltage

Average output current

1 device

520

VRRM

1200

1600

150

50Hz/60Hz, sine wave

Surge current (Non-Repetitive)

I²t (Non-Repetitive)

FSM

780

A²s

10ms, Tj=150°C

half sine wave

I²t

3000

175

Inverter, Brake

Converter

Junction temperature

150

Inverter, Brake

Converter

150

Operating junciton temperature

(under switching conditions)

Tjop

°C

150

Case temperature

125

Storage temperature

Tstg

-40 to +125

between terminal and copper base (*1)

between thermistor and others (*2)

Isolation voltage

Screw torque

iso

AC : 1min.

2500

3.5

VAC

N m

Mounting (*3)

Note *1: All terminals should be connected together during the test.

Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.

Note *3: Recommendable value : 2.5-3.5 Nm (M5)

12 3 4 5 6 7 8

中文翻译

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