http://www.fujielectric.com/products/semiconductor/
IGBT Modules
7MBR10VKC120-50
IGBT MODULE (V series)
1200V / 10A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Maximum
ratings
Items
Symbols
Conditions
Units
Collector-Emitter voltage
Gate-Emitter voltage
V
V
CES
GES
1200
±20
10
V
V
Ic
Continuous
1ms
T
T
C
C
=100°C
=80°C
I
cp
20
Collector current
A
-I
c
10
-Ic pulse
1ms
20
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
P
V
V
C
1 device
110
1200
±20
10
W
V
CES
GES
V
IC
Continuous
1ms
T
T
C
C
=80°C
=80°C
Collector current
A
I
CP
20
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
P
V
V
C
1 device
110
1200
1600
10
W
V
RRM
RRM
V
I
I
O
50Hz/60Hz, sine wave
10ms, T=150°C
A
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
FSM
245
300
175
150
A
A2s
j
I2t
half sine wave
Inverter, Brake
Converter
Junction temperature
Tj
Operating junciton temperature
(under switching conditions)
T
jop
Inverter, Brake
150
˚C
Case temperature
T
T
C
125
Storage temperature
stg
-40 to +125
between terminal and copper base (*1)
between thermistor and others (*2)
Isolation voltage
Screw torque
V
iso
AC : 1min.
M4
2500
1.7
VAC
Nm
Mounting (*3)
-
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 1.3-1.7 Nm (M4)
1492
FEBRUARY 2013
1