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79LV2040RPFE-25 PDF预览

79LV2040RPFE-25

更新时间: 2024-11-19 22:37:11
品牌 Logo 应用领域
麦斯威 - MAXWELL 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
17页 472K
描述
20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM

79LV2040RPFE-25 技术参数

生命周期:Transferred零件包装代码:DFP
包装说明:DFP,针数:100
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.42
最长访问时间:250 nsJESD-30 代码:R-PDFP-F100
长度:34.6964 mm内存密度:20971520 bit
内存集成电路类型:EEPROM内存宽度:40
功能数量:1端子数量:100
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:512KX40
封装主体材料:PLASTIC/EPOXY封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL编程电压:3 V
认证状态:Not Qualified座面最大高度:12.7 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:FLAT端子节距:0.635 mm
端子位置:DUAL总剂量:100k Rad(Si) V
宽度:22.7838 mm最长写入周期时间 (tWC):15 ms
Base Number Matches:1

79LV2040RPFE-25 数据手册

 浏览型号79LV2040RPFE-25的Datasheet PDF文件第2页浏览型号79LV2040RPFE-25的Datasheet PDF文件第3页浏览型号79LV2040RPFE-25的Datasheet PDF文件第4页浏览型号79LV2040RPFE-25的Datasheet PDF文件第5页浏览型号79LV2040RPFE-25的Datasheet PDF文件第6页浏览型号79LV2040RPFE-25的Datasheet PDF文件第7页 
79LV2040  
20 Megabit (512K x 40-Bit) Low  
Low Voltage EEPROM MCM  
Logic Diagram  
DESCRIPTION:  
FEATURES:  
• 512k x 40-bit EEPROM MCM  
• RAD-PAK® radiation-hardened against natural  
• space radiation  
Maxwell Technologies’ 79LV2040 multi-chip module (MCM)  
memory features a greater than 100 krad (Si) total dose toler-  
ance, dependent upon orbit. Using Maxwell Technologies’ pat-  
ented radiation-hardened RAD-PAK® MCM packaging  
technology, the 79LV2040 is the first radiation-hardened 8  
megabit MCM EEPROM for space application. The 79LV2040  
uses twenty 1 Megabit high speed CMOS die to yield a 20  
megabit product. The 79LV2040 is capable of in-system elec-  
trical byte and page programmability. It has a 128 x 40 page  
programming function to make the erase and write operations  
faster. It also features Data Polling and a Ready/Busy signal to  
indicate the completion of erase and programming operations.  
In the 79LV2040, hardware data protection is provided with  
the RES pin, in addition to noise protection on the WE signal  
and write inhibit on power on and off. Software data protection  
is implemented using the JEDEC optional standard algorithm.  
Total dose hardness:  
- >100 krad (Si)  
- Dependent upon orbit  
• Excellent Single event effects  
- SEL > 84 MeV/mg/cm2  
TH  
- SEU > 37 MeV/mg/cm2 read mode  
- SEU = 11.4 MeV/mg/cm2 write mode  
High endurance  
- 10,000 cycles (Page Programming Mode)  
- 10 year data retention  
• Page Write Mode: 128 Dword Page  
High Speed:  
- 200 and 250 ns maximum access times  
Automatic programming  
- 15 ms automatic Page/Dword write  
Low power dissipation  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK provides greater than 100  
krad (Si) radiation dose tolerance. This product is available  
with screening up to Maxwell Technologies self-defined Class  
K
- 100 mW/MHz active current  
- 1.5 mW standby current  
09.07.05 Rev 1  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com  
©2005 Maxwell Technologies  
All rights reserved.  

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