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79LV0832RT4QI-25 PDF预览

79LV0832RT4QI-25

更新时间: 2024-11-27 22:16:35
品牌 Logo 应用领域
麦斯威 - MAXWELL 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
21页 459K
描述
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM

79LV0832RT4QI-25 技术参数

生命周期:Transferred零件包装代码:QFP
包装说明:QFF,针数:96
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.19
Is Samacsys:N最长访问时间:250 ns
JESD-30 代码:S-XQFP-F96长度:36.068 mm
内存密度:8388608 bit内存集成电路类型:EEPROM
内存宽度:32功能数量:1
端子数量:96字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256KX32封装主体材料:UNSPECIFIED
封装代码:QFF封装形状:SQUARE
封装形式:FLATPACK并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
座面最大高度:5.0546 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:1.27 mm端子位置:QUAD
总剂量:40k Rad(Si) V宽度:36.068 mm
最长写入周期时间 (tWC):15 msBase Number Matches:1

79LV0832RT4QI-25 数据手册

 浏览型号79LV0832RT4QI-25的Datasheet PDF文件第2页浏览型号79LV0832RT4QI-25的Datasheet PDF文件第3页浏览型号79LV0832RT4QI-25的Datasheet PDF文件第4页浏览型号79LV0832RT4QI-25的Datasheet PDF文件第5页浏览型号79LV0832RT4QI-25的Datasheet PDF文件第6页浏览型号79LV0832RT4QI-25的Datasheet PDF文件第7页 
79LV0832  
8 Megabit (256K x 32-Bit)  
Low Voltage EEPROM MCM  
FEATURES:  
DESCRIPTION:  
• 256k x 32-bit EEPROM MCM  
• RAD-PAK® radiation-hardened against natural  
space radiation  
Maxwell Technologies’ 79LV0832 multi-chip module (MCM)  
memory features a greater than 100 krad (Si) total dose toler-  
ance, dependent upon orbit. Using Maxwell Technologies’ pat-  
ented radiation-hardened RAD-PAK® MCM packaging  
technology, the 79LV0832 is the first radiation-hardened 8  
megabit MCM EEPROM for space application. The 79LV0832  
uses eight 1 Megabit high speed CMOS die to yield an 8  
megabit product. The 79LV0832 is capable of in-system elec-  
trical dword and page programmability. It has a 128 x 32 byte  
page programming function to make its erase and write opera-  
tions faster. It also features Data Polling and a Ready/Busy  
signal to indicate the completion of erase and programming  
operations. In the 79LV0832, hardware data protection is pro-  
vided with the RES pin. Software data protection is imple-  
mented using the JEDEC standard algorithm.  
Total dose hardness:  
- >100 krad (Si)  
- Dependent upon orbit  
• Excellent Single event effects  
- SEL > 84.7 MeV/mg/cm2  
TH  
- SEU > 26.6 MeV/mg/cm2 read mode  
- SEU = 11.4 MeV/mg/cm2 write mode  
High endurance  
- 10,000 cycles/dword, 10 year data retention  
• Page Write Mode: 2 X 128 dword page  
High Speed:  
- 200 and 250 ns maximum access times  
Automatic programming  
- 15 ms automatic Page/dword write  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK®provides greater than 100  
krad (Si) radiation dose tolerance. This product is available  
with screening up to MAxwell Technologies self-defined Class  
K.  
01.10.05 Rev 8  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com  
©2005 Maxwell Technologies  
All rights reserved.  

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