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79LV0832RT1QH-20 PDF预览

79LV0832RT1QH-20

更新时间: 2024-11-10 22:10:19
品牌 Logo 应用领域
麦斯威 - MAXWELL 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
21页 459K
描述
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM

79LV0832RT1QH-20 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:QFP包装说明:QFF,
针数:96Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.19最长访问时间:200 ns
JESD-30 代码:S-XQFP-F96长度:36.068 mm
内存密度:8388608 bit内存集成电路类型:EEPROM
内存宽度:32功能数量:1
端子数量:96字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256KX32封装主体材料:UNSPECIFIED
封装代码:QFF封装形状:SQUARE
封装形式:FLATPACK并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
座面最大高度:5.0546 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:1.27 mm端子位置:QUAD
总剂量:10k Rad(Si) V宽度:36.068 mm
最长写入周期时间 (tWC):15 msBase Number Matches:1

79LV0832RT1QH-20 数据手册

 浏览型号79LV0832RT1QH-20的Datasheet PDF文件第2页浏览型号79LV0832RT1QH-20的Datasheet PDF文件第3页浏览型号79LV0832RT1QH-20的Datasheet PDF文件第4页浏览型号79LV0832RT1QH-20的Datasheet PDF文件第5页浏览型号79LV0832RT1QH-20的Datasheet PDF文件第6页浏览型号79LV0832RT1QH-20的Datasheet PDF文件第7页 
79LV0832  
8 Megabit (256K x 32-Bit)  
Low Voltage EEPROM MCM  
FEATURES:  
DESCRIPTION:  
• 256k x 32-bit EEPROM MCM  
• RAD-PAK® radiation-hardened against natural  
space radiation  
Maxwell Technologies’ 79LV0832 multi-chip module (MCM)  
memory features a greater than 100 krad (Si) total dose toler-  
ance, dependent upon orbit. Using Maxwell Technologies’ pat-  
ented radiation-hardened RAD-PAK® MCM packaging  
technology, the 79LV0832 is the first radiation-hardened 8  
megabit MCM EEPROM for space application. The 79LV0832  
uses eight 1 Megabit high speed CMOS die to yield an 8  
megabit product. The 79LV0832 is capable of in-system elec-  
trical dword and page programmability. It has a 128 x 32 byte  
page programming function to make its erase and write opera-  
tions faster. It also features Data Polling and a Ready/Busy  
signal to indicate the completion of erase and programming  
operations. In the 79LV0832, hardware data protection is pro-  
vided with the RES pin. Software data protection is imple-  
mented using the JEDEC standard algorithm.  
Total dose hardness:  
- >100 krad (Si)  
- Dependent upon orbit  
• Excellent Single event effects  
- SEL > 84.7 MeV/mg/cm2  
TH  
- SEU > 26.6 MeV/mg/cm2 read mode  
- SEU = 11.4 MeV/mg/cm2 write mode  
High endurance  
- 10,000 cycles/dword, 10 year data retention  
• Page Write Mode: 2 X 128 dword page  
High Speed:  
- 200 and 250 ns maximum access times  
Automatic programming  
- 15 ms automatic Page/dword write  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK®provides greater than 100  
krad (Si) radiation dose tolerance. This product is available  
with screening up to MAxwell Technologies self-defined Class  
K.  
01.10.05 Rev 8  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com  
©2005 Maxwell Technologies  
All rights reserved.  

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