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79C0408RPFE-15 PDF预览

79C0408RPFE-15

更新时间: 2024-01-28 20:27:10
品牌 Logo 应用领域
麦斯威 - MAXWELL 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
20页 354K
描述
4 Megabit (512k x 8-bit) EEPROM MCM

79C0408RPFE-15 技术参数

生命周期:Active包装说明:DFP,
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.15
Is Samacsys:N最长访问时间:150 ns
JESD-30 代码:R-XDFP-F40长度:25.273 mm
内存密度:4194304 bit内存集成电路类型:EEPROM MODULE
内存宽度:8功能数量:1
端子数量:40字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX8封装主体材料:UNSPECIFIED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
座面最大高度:7.62 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:1.016 mm端子位置:DUAL
总剂量:100k Rad(Si) V宽度:21.59 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

79C0408RPFE-15 数据手册

 浏览型号79C0408RPFE-15的Datasheet PDF文件第2页浏览型号79C0408RPFE-15的Datasheet PDF文件第3页浏览型号79C0408RPFE-15的Datasheet PDF文件第4页浏览型号79C0408RPFE-15的Datasheet PDF文件第5页浏览型号79C0408RPFE-15的Datasheet PDF文件第6页浏览型号79C0408RPFE-15的Datasheet PDF文件第7页 
79C0408  
4 Megabit (512k x 8-bit)  
EEPROM MCM  
CE  
CE  
CE  
3
CE  
1
2
4
RES  
R/ B  
WE  
OE  
A0-16  
128Kx 8  
128Kx 8  
128Kx 8  
128Kx 8  
I/O  
0-7  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• Four 128k x 8-bit EEPROMs MCM  
• RAD-PAK® radiation-hardened against natural  
space radiation  
Maxwell Technologies’ 79C0408 multi-chip module (MCM)  
memory features a greater than 100 krad (Si) total dose toler-  
ance, depending upon space mission. Using Maxwell Technol-  
ogies’ patented radiation-hardened RAD-PAK® MCM  
packaging technology, the 79C0408 is the first radiation-hard-  
ened 4 Megabit MCM EEPROM for space applications. The  
79C0408 uses four 1 Megabit high-speed CMOS die to yield a  
4 Megabit product. The 79C0408 is capable of in-system elec-  
trical Byte and Page programmability. It has a 128 bytes Page  
Programming function to make its erase and write operations  
faster. It also features Data Polling and a Ready/Busy signal to  
indicate the completion of erase and programming operations.  
In the 79C0408, hardware data protection is provided with the  
RES pin, in addition to noise protection on the WE signal.  
Software data protection is implemented using the JEDEC  
optional standard algorithm.  
Total dose hardness:  
- > 100 krad (Si), depending upon space mission  
• Excellent Single Event Effects  
- SEL > 120 MeV/mg/cm2  
- SEU > 90 MeV/mg/cm2 read mode  
- SEU = 18 MeV/mg/cm2 write mode  
• Package:  
• - 40 pin RAD-PAK® flat pack  
• - 40 pin X-Ray PakTM flat pack  
• - 40 pin Rad-Tolerant flat pack  
High speed:  
- 120, 150, and 200 ns maximum access times  
available  
Data Polling and Ready/Busy signal  
• Software data protection  
Write protection by RES pin  
High endurance  
- 10,000 erase/write (in Page Mode),  
- 10 year data retention  
• Page write mode: 1 to 128 byte page  
Low power dissipation  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, the RAD-PAK® package provides  
greater than 100 krad (Si) radiation dose tolerance. This prod-  
uct is available with screening up to Class K.  
- 80 mW/MHz active mode  
- 440 µW standby mode  
10.13.04 Rev 15  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com  
©2004 Maxwell Technologies  
All rights reserved.  

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