Datasheet > 75PT16C

75PT16C

更新时间： 2024-02-17 01:36:48

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
5页	708K
描述
Stansard SCRs

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数据手册

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75PT16C 数据手册

RoHS

75PT Series _RoHS

Stansard SCRs, 75A

Main Features

Symbol

Value

Unit

T(RMS)

1200 to 1600

DRM RRM

Max.

TO-3P (Insulated)

TO-247S (non-Insulated)

(75PTxxD)

(75PTxxBI)

DESCRIPTION

The 75PT series of silicon controlled rectifiers are

high performance glass passivated technology,

and are suitable for general purpose applications,

where power handling and power dissipation are

critical, such as solid state relay, welding equipment

and high power motor control.

2(A)

Base on a clip assembly technology, they offer a

superior performance in surge current capabilities.

3(G)

TO-247AD (non-Insulated)

1(K)

(75PTxxC)

Thanks to their internal ceramic pad, they provide

high voltage insulation(2500V

RMS

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUE

UNIT

T_c=90°C

TO-247AD / TO-247S

RMS on-state current full sine wave

I_T(RMS)

(180° conduction angle )

T_c=80°C

TO-3P insulated

T_c=90°C

TO-247AD / TO-247S

Average on-state current

(180° conduction angle)

I_T(AV)

T_c=80°C

TO-3P insulated

F =50 Hz

F =60 Hz

t_p= 10 ms

t = 20 ms

t = 16.7 ms

800

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

860

I t Value for fusing

A s

I t

3200

Critical rate of rise of on-state current

V_D= 67% V_DRM, t_p= 200μs, I_G= 0.3A

d_IG/dt = 0.3A/μs

T_j= 125ºC

A/µs

dI/dt

F = 60 Hz

150

T_p= 20 µs

T_p=20µs

T_j=125ºC

T_j= 125ºC

Peak gate current

I_GM

P_GM

Maximum gate power

P_G(AV)

Average gate power dissipation

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Storage temperature range

Operating junction temperature range

DRM

T_j=125ºC

1200 to 1600

RRM

- 40 to + 150

- 40 to + 125

stg

ºC

T_j

Maximum peak reverse gate voltage V_RGM

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