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74VHCT86AM PDF预览

74VHCT86AM

更新时间: 2024-11-20 22:51:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 58K
描述
QUAD EXCLUSIVE OR GATE

74VHCT86AM 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP14,.25
针数:14Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.34
系列:AHCT/VHCTJESD-30 代码:R-PDSO-G14
JESD-609代码:e4长度:8.65 mm
负载电容(CL):50 pF逻辑集成电路类型:XOR GATE
最大I(ol):0.008 A功能数量:4
输入次数:2端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TUBE
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
Prop。Delay @ Nom-Sup:10 ns传播延迟(tpd):10 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:1.75 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

74VHCT86AM 数据手册

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74VHCT86A  
QUAD EXCLUSIVE OR GATE  
PRELIMINARY DATA  
HIGH SPEED:tPD =5 ns (TYP.) atVCC =5V  
LOW POWER DISSIPATION:  
I
CC =2 µA (MAX.) at TA =25 oC  
COMPATIBLEWITH TTL OUTPUTS:  
VIH =2V (MIN), VIL = 0.8V(MAX)  
POWERDOWN PROTECTIONON INPUTS&  
OUTPUTS  
SYMMETRICAL OUTPUT IMPEDANCE:  
|IOH| = IOL = 8 mA (MIN)  
BALANCEDPROPAGATIONDELAYS:  
tPLH tPHL  
OPERATING VOLTAGERANGE:  
M
T
(Micro Package)  
(TSSOPPackage)  
ORDER CODES :  
74VHCT86AM  
74VHCT86AT  
metal wiring C2MOS technology.  
Power down protection is provided on all inputs  
and outputs and 0 to 7V can be accepted on  
inputs with no regard to the supply voltage. This  
device can be used to interface 5V to 3V.  
VCC (OPR)= 4.5V to 5.5V  
PIN AND FUNCTION COMPATIBLEWITH  
74 SERIES86  
IMPROVED LATCH-UP IMMUNITY  
LOWNOISE:VOLP = 0.8V(Max.)  
All inputs and outputs are equipped with  
protection circuits against static discharge, giving  
them 2KV ESD immunity and transient excess  
voltage.  
DESCRIPTION  
The 74VHCT86A is an advanced high-speed  
CMOS QUAD EXCLUSIVE OR GATE fabricated  
with sub-micron silicon gate and double-layer  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
1/8  
August 1999  

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