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74VHC125MXNL PDF预览

74VHC125MXNL

更新时间: 2024-02-12 14:55:37
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
12页 243K
描述
Quad Buffer with 3-STATE Outputs

74VHC125MXNL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:TSSOP-14针数:14
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.02Is Samacsys:N
控制类型:ENABLE LOW系列:AHC/VHC/H/U/V
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:5 mm逻辑集成电路类型:BUS DRIVER
最大I(ol):0.008 A位数:1
功能数量:4端口数量:2
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TAPE AND REEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2/5.5 VProp。Delay @ Nom-Sup:8.5 ns
传播延迟(tpd):13 ns认证状态:Not Qualified
座面最大高度:1.2 mm子类别:Bus Driver/Transceivers
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:4.4 mm
Base Number Matches:1

74VHC125MXNL 数据手册

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74VHC125  
QUAD BUS BUFFERS (3-STATE)  
HIGH SPEED: t = 3.8ns (TYP.) at V = 5V  
PD CC  
LOW POWER DISSIPATION:  
I
= 4 µA (MAX.) at T =25°C  
CC  
A
HIGH NOISE IMMUNITY:  
= V = 28% V (MIN.)  
V
NIH  
NIL  
CC  
POWER DOWN PROTECTION ON INPUTS  
SYMMETRICAL OUTPUT IMPEDANCE:  
SOP  
TSSOP  
|I | = I = 8mA (MIN)  
OH  
OL  
BALANCED PROPAGATION DELAYS:  
Table 1: Order Codes  
PACKAGE  
t
t
PLH  
PHL  
OPERATING VOLTAGE RANGE:  
(OPR) = 2V to 5.5V  
T & R  
V
CC  
SOP  
74VHC125MTR  
74VHC125TTR  
PIN AND FUNCTION COMPATIBLE WITH  
74 SERIES 125  
TSSOP  
IMPROVED LATCH-UP IMMUNITY  
LOW NOISE: V  
= 0.8V (MAX.)  
Power down protection is provided on all inputs  
and 0 to 7V can be accepted on inputs with no  
regard to the supply voltage. This device can be  
used to interface 5V to 3V.  
All inputs and outputs are equipped with  
protection circuits against static discharge, giving  
them 2KV ESD immunity and transient excess  
voltage.  
OLP  
DESCRIPTION  
The 74VHC125 is an advanced high-speed  
CMOS QUAD BUS BUFFERS fabricated with  
sub-micron silicon gate and double-layer metal  
2
wiring C MOS technology.  
The device requires the 3-STATE control input G  
to be set high to place the output in to the high  
impedance state.  
Figure 1: Pin Connection And IEC Logic Symbols  
Rev. 7  
1/12  
November 2004  

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