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74VHC03_04 PDF预览

74VHC03_04

更新时间: 2024-11-16 04:48:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 输入元件
页数 文件大小 规格书
11页 236K
描述
QUAD 2-INPUT OPEN DRAIN NAND GATE

74VHC03_04 数据手册

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74VHC03  
QUAD 2-INPUT OPEN DRAIN NAND GATE  
HIGH SPEED: t = 3.7ns (TYP.) at V = 5V  
PD CC  
LOW POWER DISSIPATION:  
I
= 2 µA (MAX.) at T =25°C  
CC  
A
HIGH NOISE IMMUNITY:  
= V = 28% V (MIN.)  
V
NIH  
NIL  
CC  
POWER DOWN PROTECTION ON INPUTS  
OPERATING VOLTAGE RANGE:  
SOP  
TSSOP  
V
(OPR) = 2V to 5.5V  
CC  
PIN AND FUNCTION COMPATIBLE WITH  
74 SERIES 03  
IMPROVED LATCH-UP IMMUNITY  
Table 1: Order Codes  
PACKAGE  
T & R  
LOW NOISE: V  
= 0.8V (MAX.)  
OLP  
SOP  
74VHC03MTR  
74VHC03TTR  
TSSOP  
DESCRIPTION  
The 74VHC03 is an advanced high-speed CMOS  
QUAD 2-INPUT OPEN DRAIN NAND GATE  
fabricated with sub-micron silicon gate and  
Power down protection is provided on all inputs  
and 0 to 7V can be accepted on inputs with no  
regard to the supply voltage. This device can be  
used to interface 5V to 3V.  
All inputs and outputs are equipped with  
protection circuits against static discharge, giving  
them 2KV ESD immunity and transient excess  
voltage.  
2
double-layer metal wiring C MOS technology.  
The internal circuit is composed of 3 stages  
including buffer output, which provides high noise  
immunity and stable output.  
This device can, with an external pull-up resistor,  
be used in wired AND configuration. This device  
can also be used as a led driver and in any other  
application requiring a current sink.  
Figure 1: Pin Connection And IEC Logic Symbols  
Rev. 4  
1/11  
November 2004  

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