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74VHC02TTR PDF预览

74VHC02TTR

更新时间: 2024-11-15 22:56:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发器逻辑集成电路光电二极管输入元件
页数 文件大小 规格书
8页 158K
描述
QUAD 2-INPUT NOR GATE

74VHC02TTR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:TSSOP-14针数:14
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:43 weeks 2 days风险等级:5.02
Is Samacsys:N系列:AHC/VHC/H/U/V
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:5 mm负载电容(CL):50 pF
逻辑集成电路类型:NOR GATE最大I(ol):0.008 A
功能数量:4输入次数:2
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TAPE AND REEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2/5.5 VProp。Delay @ Nom-Sup:8.5 ns
传播延迟(tpd):13 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.2 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4.4 mmBase Number Matches:1

74VHC02TTR 数据手册

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74VHC02  
QUAD 2-INPUT NOR GATE  
HIGH SPEED: t = 3.6ns (TYP.) at V = 5V  
PD CC  
LOW POWER DISSIPATION:  
I
= 2 µA (MAX.) at T =25°C  
CC  
A
HIGH NOISE IMMUNITY:  
= V = 28% V (MIN.)  
V
NIH  
NIL  
CC  
POWER DOWN PROTECTION ON INPUTS  
SYMMETRICAL OUTPUT IMPEDANCE:  
SOP  
TSSOP  
|I | = I = 8mA (MIN)  
OH  
OL  
BALANCED PROPAGATION DELAYS:  
t
t
ORDER CODES  
PACKAGE  
PLH  
PHL  
OPERATING VOLTAGE RANGE:  
(OPR) = 2V to 5.5V  
TUBE  
T & R  
V
CC  
SOP  
74VHC02M  
74VHC02MTR  
74VHC02TTR  
PIN AND FUNCTION COMPATIBLE WITH  
74 SERIES 02  
TSSOP  
IMPROVED LATCH-UP IMMUNITY  
LOW NOISE: V  
= 0.8V (MAX.)  
Power down protection is provided on all inputs  
and 0 to 7V can be accepted on inputs with no  
regard to the supply voltage. This device can be  
used to interface 5V to 3V.  
All inputs and outputs are equipped with  
protection circuits against static discharge, giving  
them 2KV ESD immunity and transient excess  
voltage.  
OLP  
DESCRIPTION  
The 74VHC02 is an advanced high-speed CMOS  
QUAD 2-INPUT NOR GATE fabricated with  
sub-micron silicon gate and double-layer metal  
2
wiring C MOS technology.  
The internal circuit is composed of 3 stages  
including buffer output, which provides high noise  
immunity and stable output.  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
June 2001  
1/8  

74VHC02TTR 替代型号

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