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74V1T86C

更新时间： 2024-09-28 22:45:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
7页	52K
描述
SINGLE EXCLUSIVE OR GATE

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中文翻译

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数据手册

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74V1T86C 数据手册

74V1T86

SINGLE EXCLUSIVE OR GATE

■

HIGH SPEED:t_PD=5 ns (TYP.) atV_CC=5V

LOW POWER DISSIPATION:

I_CC=1 µA (MAX.) at T_A=25 ^oC

COMPATIBLEWITH TTL OUTPUTS:

V_IH=2V (MIN), V_IL= 0.8V(MAX)

POWERDOWN PROTECTIONON INPUTS&

OUTPUT

SYMMETRICAL OUTPUT IMPEDANCE:

|I_OH| = I_OL= 8 mA (MIN)

BALANCEDPROPAGATIONDELAYS:

t_PLHt_PHL

■

(SOT23-5L)

(SC-70)

ORDER CODE:

74V1T86S

74V1T86C

wiring C²MOS technology.

Power down protection is provided on all inputs

and 0 to 7V can be accepted on inputs with no

regard to the supply voltage. This device can be

used to interface5V to 3V.

OPERATING VOLTAGERANGE:

V_CC(OPR)= 4.5V to 5.5V

IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V1T86 is an advanced high-speed CMOS

SINGLE EXCLUSIVE OR GATE fabricated with

sub-micron silicon gate and double-layer metal

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/7

October 1999

12 3 4 5 6 7

中文翻译

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