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74V1T70S PDF预览

74V1T70S

更新时间: 2024-11-03 22:45:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
7页 49K
描述
SINGLE BUFFER

74V1T70S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:SOT-23, 5 PIN针数:5
Reach Compliance Code:not_compliantHTS代码:8542.39.00.01
风险等级:5.92系列:74V
JESD-30 代码:R-PDSO-G5JESD-609代码:e0
长度:2.9 mm负载电容(CL):50 pF
逻辑集成电路类型:BUFFER最大I(ol):0.008 A
功能数量:1输入次数:1
端子数量:5最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP5/6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
Prop。Delay @ Nom-Sup:8.5 ns传播延迟(tpd):8.5 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:1.45 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.625 mm
Base Number Matches:1

74V1T70S 数据手册

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74V1T70  
SINGLE BUFFER  
PRELIMINARY DATA  
HIGH SPEED:tPD =5.5ns (TYP.) atVCC = 5V  
LOW POWER DISSIPATION:  
I
CC =1 µA (MAX.) at TA =25 oC  
COMPATIBLEWITH TTL OUTPUTS:  
VIH =2V (MIN), VIL = 0.8V(MAX)  
POWERDOWN PROTECTIONON INPUT  
SYMMETRICAL OUTPUT IMPEDANCE:  
|IOH| = IOL = 8 mA (MIN)  
S
C
(SOT23-5L)  
(SC-70)  
ORDER CODE:  
74V1T70S 74V1T70C  
BALANCEDPROPAGATIONDELAYS:  
tPLH tPHL  
OPERATING VOLTAGERANGE:  
VCC (OPR)= 4.5V to 5.5V  
The internal circuit is composed of 2 stages  
including buffer output, which provide high noise  
immunity and stable output.  
IMPROVED LATCH-UP IMMUNITY  
Power down protection is provided on input and 0  
to 7V can be accepted on input with no regard to  
the supply voltage. This device can be used to  
interface5V to 3V.  
DESCRIPTION  
The 74V1T70 is an advanced high-speed CMOS  
SINGLE BUFFER fabricated with sub-micron  
silicon gate and double-layermetal wiring C2MOS  
technology.  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
1/7  
October 1999  

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