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74V1T14STR PDF预览

74V1T14STR

更新时间: 2024-11-04 04:01:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
9页 111K
描述
SINGLE SCHMITT INVERTER

74V1T14STR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:SOT-23, 5 PIN针数:5
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:16 weeks风险等级:5.42
Is Samacsys:N系列:74V
JESD-30 代码:R-PDSO-G5JESD-609代码:e3
长度:2.9 mm负载电容(CL):50 pF
逻辑集成电路类型:INVERTER最大I(ol):0.008 A
湿度敏感等级:1功能数量:1
输入次数:1端子数量:5
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSOP5/6,.11,37封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:5 V
Prop。Delay @ Nom-Sup:11.5 ns传播延迟(tpd):11.5 ns
认证状态:Not Qualified施密特触发器:YES
座面最大高度:1.45 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:1.625 mm
Base Number Matches:1

74V1T14STR 数据手册

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74V1T14  
SINGLE SCHMITT INVERTER  
HIGH SPEED: t = 5.0ns (TYP.) at V = 5V  
PD CC  
LOW POWER DISSIPATION:  
I
= 1µA(MAX.) at T =25°C  
CC  
A
TYPICAL HYSTERESIS:  
V =700mV at V =4.5V  
h
CC  
POWER DOWN PROTECTION ON INPUT  
SYMMETRICAL OUTPUT IMPEDANCE:  
SOT23-5L  
SOT323-5L  
T & R  
|I | = I = 8mA (MIN) at V = 4.5V  
OH  
OL  
CC  
BALANCED PROPAGATION DELAYS:  
t
t
ORDER CODES  
PLH  
PHL  
OPERATING VOLTAGE RANGE:  
(OPR) = 4.5V to 5.5V  
PACKAGE  
V
CC  
SOT23-5L  
74V1T14STR  
74V1T14CTR  
IMPROVED LATCH-UP IMMUNITY  
SOT323-5L  
DESCRIPTION  
The 74V1T14 is an advanced high-speed CMOS  
SINGLE SCHMITT INVERTER fabricated with  
sub-micron silicon gate and double-layer metal  
interface 5V to 3V. Pin configuration and function  
are the same as those of the 74V1T04 but the  
74V1T14 has hysteresis.  
This together with its schmitt trigger function  
allows it to be used on line receivers with slow  
rise/fall input signals.  
The input is equipped with protection circuits  
against static discharge, giving it ESD immunity  
and transient excess voltage.  
2
wiring C MOS technology.  
The internal circuit is composed of 3 stages  
including buffer output, which provide high noise  
immunity and stable output.  
Power down protection is provided on input and 0  
to 7V can be accepted on input with no regard to  
the supply voltage. This device can be used to  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
April 2004  
1/9  

74V1T14STR 替代型号

型号 品牌 替代类型 描述 数据表
SN74AHCT1G14DBVR TI

类似代替

SINGLE SCHMITT-TRIGGER INVERTER GATE
SN74AHCT1G14DCKRG4 TI

功能相似

SINGLE SCHMITT-TRIGGER INVERTER GATE
SN74AHCT1G14DBVT TI

功能相似

SINGLE SCHMITT-TRIGGER INVERTER GATE

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