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74V1T07_04 PDF预览

74V1T07_04

更新时间: 2024-11-04 04:01:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 113K
描述
SINGLE BUFFER (OPEN DRAIN)

74V1T07_04 数据手册

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74V1T07  
SINGLE BUFFER (OPEN DRAIN)  
HIGH SPEED: t = 4.3ns (TYP.) at V = 5V  
PD CC  
LOW POWER DISSIPATION:  
I
= 1µA(MAX.) at T =25°C  
CC  
A
COMPATIBLE WITH TTL OUTPUTS:  
= 2V (MIN), V = 0.8V (MAX)  
V
IH  
IL  
POWER DOWN PROTECTION ON INPUT  
OPERATING VOLTAGE RANGE:  
SOT23-5L  
SOT323-5L  
T & R  
V
(OPR) = 4.5V to 5.5V  
CC  
IMPROVED LATCH-UP IMMUNITY  
ORDER CODES  
PACKAGE  
DESCRIPTION  
SOT23-5L  
74V1T07STR  
74V1T07CTR  
The 74V1T07 is an advanced high-speed CMOS  
SINGLE BUFFER (OPEN DRAIN) fabricated with  
sub-micron silicon gate and double-layer metal  
SOT323-5L  
2
wiring C MOS technology.  
Power down protection is provided on input and 0  
to 7V can be accepted on input with no regard to  
the supply voltage. This device can be used to  
interface 5V to 3V.  
The internal circuit is composed of 2 stages  
including buffer output, which provide high noise  
immunity and stable output.  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
April 2004  
1/9  

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