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74V1G03S PDF预览

74V1G03S

更新时间: 2024-09-14 22:16:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 输入元件
页数 文件大小 规格书
7页 52K
描述
SINGLE 2-INPUT OPEN DRAIN NAND GATE

74V1G03S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SOT-23, 5 PIN
针数:5Reach Compliance Code:not_compliant
HTS代码:8542.39.00.01风险等级:5.91
系列:74VJESD-30 代码:R-PDSO-G5
JESD-609代码:e0长度:2.9 mm
负载电容(CL):50 pF逻辑集成电路类型:NAND GATE
最大I(ol):0.004 A功能数量:1
输入次数:2端子数量:5
最高工作温度:125 °C最低工作温度:-55 °C
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP5/6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:2/5.5 V
Prop。Delay @ Nom-Sup:13 ns传播延迟(tpd):11 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:1.45 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.625 mm
Base Number Matches:1

74V1G03S 数据手册

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74V1G03  
SINGLE 2-INPUT OPEN DRAIN NAND GATE  
PRELIMINARY DATA  
HIGH SPEED:tPD =3.7ns (TYP.) atVCC = 5V  
LOW POWER DISSIPATION:  
CC =1 µA (MAX.) at TA =25 oC  
HIGH NOISEIMMUNITY:  
NIH = VNIL =28% VCC (MIN.)  
I
V
S
C
POWERDOWN PROTECTIONON INPUTS  
OPERATING VOLTAGERANGE:  
(SOT23-5L)  
(SC-70)  
ORDER CODE:  
VCC (OPR)= 2V to 5.5V  
74V1G03S  
74V1G03C  
IMPROVED LATCH-UP IMMUNITY  
This device can, with an external pull-up resistor,  
be used in wired AND configuration. This device  
can also be used as a led driver in any other  
application requiring a current sink.  
Power down protection is provided on all inputs  
and 0 to 7V can be accepted on inputs with no  
regard to the supply voltage. This device can be  
used to interface5V to 3V.  
DESCRIPTION  
The 74V1G03 is an advanced high-speed CMOS  
SINGLE 2-INPUT OPEN DRAIN NAND GATE  
fabricated with sub-micron silicon gate and  
double-layermetal wiring C2MOS technology.  
The internal circuit is composed of 3 stages  
including buffer output, which provide high noise  
immunity and stable output.  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
1/7  
September 1999  

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