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74V1G00

更新时间： 2024-11-04 22:09:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		输入元件
页数	文件大小	规格书
7页	51K
描述
SINGLE 2-INPUT NAND GATE

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中文翻译

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74V1G00 数据手册

74V1G00

SINGLE 2-INPUT NAND GATE

■

HIGH SPEED:t_PD=3.7ns (TYP.) atV_CC= 5V

LOW POWER DISSIPATION:

_CC=1 µA (MAX.) at T_A=25 ^oC

■

HIGH NOISEIMMUNITY:

_NIH= V_NIL=28% V_CC(MIN.)

■

POWERDOWN PROTECTIONON INPUTS

SYMMETRICAL OUTPUT IMPEDANCE:

|I_OH| = I_OL= 8 mA (MIN)

BALANCEDPROPAGATIONDELAYS:

t_PLHt_PHL

OPERATING VOLTAGERANGE:

V_CC(OPR)= 2V to 5.5V

IMPROVED LATCH-UP IMMUNITY

(SOT23-5L)

(SC-70)

ORDER CODE:

74V1G00S

74V1G00C

■

The internal circuit is composed of 3 stages

including buffer output, which provide high noise

immunity and stable output.

Power down protection is provided on all inputs

and 0 to 7V can be accepted on inputs with no

regard to the supply voltage. This device can be

used to interface5V to 3V.

DESCRIPTION

The 74V1G00 is an advanced high-speed CMOS

SINGLE 2-INPUT NAND GATE fabricated with

sub-micron silicon gate and double-layer metal

wiring C²MOS technology.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/7

October 1999

12 3 4 5 6 7

中文翻译

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