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74LVQ20MTR PDF预览

74LVQ20MTR

更新时间: 2024-11-18 21:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发器逻辑集成电路光电二极管输入元件
页数 文件大小 规格书
8页 156K
描述
DUAL 4-INPUT NAND GATE

74LVQ20MTR 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP-14
针数:14Reach Compliance Code:not_compliant
HTS代码:8542.39.00.01风险等级:5.88
Is Samacsys:N系列:LVQ
JESD-30 代码:R-PDSO-G14JESD-609代码:e0
长度:8.65 mm负载电容(CL):50 pF
逻辑集成电路类型:NAND GATE最大I(ol):0.024 A
功能数量:2输入次数:4
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 VProp。Delay @ Nom-Sup:10.5 ns
传播延迟(tpd):13 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.75 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

74LVQ20MTR 数据手册

 浏览型号74LVQ20MTR的Datasheet PDF文件第2页浏览型号74LVQ20MTR的Datasheet PDF文件第3页浏览型号74LVQ20MTR的Datasheet PDF文件第4页浏览型号74LVQ20MTR的Datasheet PDF文件第5页浏览型号74LVQ20MTR的Datasheet PDF文件第6页浏览型号74LVQ20MTR的Datasheet PDF文件第7页 
74LVQ20  
DUAL 4-INPUT NAND GATE  
HIGH SPEED:  
= 5.3 ns (TYP.) at V = 3.3 V  
t
PD  
CC  
COMPATIBLE WITH TTL OUTPUTS  
LOW POWER DISSIPATION:  
I
= 2µA(MAX.) at T =25°C  
CC  
A
LOW NOISE:  
= 0.3V (TYP.) at V = 3.3V  
75TRANSMISSION LINE DRIVING  
CAPABILITY  
SYMMETRICAL OUTPUT IMPEDANCE:  
V
SOP  
TSSOP  
OLP  
CC  
ORDER CODES  
PACKAGE  
|I | = I = 12mA (MIN) at V = 3.0 V  
OH  
OL  
CC  
TUBE  
T & R  
PCI BUS LEVELS GUARANTEED AT 24 mA  
BALANCED PROPAGATION DELAYS:  
SOP  
74LVQ20M  
74LVQ20MTR  
74LVQ20TTR  
TSSOP  
t
t
PHL  
PLH  
OPERATING VOLTAGE RANGE:  
(OPR) = 2V to 3.6V  
PIN AND FUNCTION COMPATIBLE WITH  
74 SERIES 20  
V
technology. It is ideal for low power and low noise  
3.3V applications.  
The internal circuit is composed of 3 stages  
including buffer output, which enables high noise  
immunity and stable output.  
CC  
IMPROVED LATCH-UP IMMUNITY  
DESCRIPTION  
The 74LVQ20 is a low voltage CMOS DUAL  
4-INPUT NAND GATE fabricated with sub-micron  
All inputs and outputs are equipped with  
protection circuits against static discharge, giving  
them 2KV ESD immunity and transient excess  
voltage.  
2
silicon gate and double-layer metal wiring C MOS  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
July 2001  
1/8  

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