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74LVC3G17GD PDF预览

74LVC3G17GD

更新时间: 2024-10-02 06:31:55
品牌 Logo 应用领域
恩智浦 - NXP 触发器
页数 文件大小 规格书
18页 102K
描述
Triple non-inverting Schmitt trigger with 5 V tolerant input

74LVC3G17GD 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SON
包装说明:3 X 2 MM, 0.5 MM HEIGHT, SOT996-2, SON-8U针数:8
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.4系列:LVC/LCX/Z
JESD-30 代码:R-PDSO-N8JESD-609代码:e4
长度:3 mm负载电容(CL):50 pF
逻辑集成电路类型:BUFFER最大I(ol):0.024 A
湿度敏感等级:1功能数量:3
输入次数:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装等效代码:SOLCC8,.11,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:3.3 V
Prop。Delay @ Nom-Sup:7.1 ns传播延迟(tpd):13.1 ns
认证状态:Not Qualified施密特触发器:YES
座面最大高度:0.5 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:NICKEL PALLADIUM GOLD端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:2 mm
Base Number Matches:1

74LVC3G17GD 数据手册

 浏览型号74LVC3G17GD的Datasheet PDF文件第2页浏览型号74LVC3G17GD的Datasheet PDF文件第3页浏览型号74LVC3G17GD的Datasheet PDF文件第4页浏览型号74LVC3G17GD的Datasheet PDF文件第5页浏览型号74LVC3G17GD的Datasheet PDF文件第6页浏览型号74LVC3G17GD的Datasheet PDF文件第7页 
74LVC3G17  
Triple non-inverting Schmitt trigger with 5 V tolerant input  
Rev. 06 — 6 June 2008  
Product data sheet  
1. General description  
The 74LVC3G17 provides three non-inverting buffers with Schmitt trigger action. It is  
capable of transforming slowly changing input signals into sharply defined, jitter-free  
output signals.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of the  
74LVC3G17 as a translator in a mixed 3.3 V and 5 V environment.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing a damaging backflow current through the device  
when it is powered down.  
2. Features  
I Wide supply voltage range from 1.65 V to 5.5 V  
I 5 V tolerant input/output for interfacing with 5 V logic  
I High noise immunity  
I ESD protection:  
N HBM JESD22-A114E exceeds 2000 V  
N MM JESD22-A115-A exceeds 200 V  
I ±24 mA output drive (VCC = 3.0 V)  
I CMOS low-power consumption  
I Latch-up performance exceeds 250 mA  
I Direct interface with TTL levels  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C  
3. Applications  
I Wave and pulse shapers for highly noisy environments  

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