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74LVC3G14GT PDF预览

74LVC3G14GT

更新时间: 2024-09-29 22:56:23
品牌 Logo 应用领域
恩智浦 - NXP 触发器逻辑集成电路光电二极管
页数 文件大小 规格书
17页 89K
描述
Triple inverting Schmitt trigger with 5 V tolerant input

74LVC3G14GT 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:1 X 1.95 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT833-1, SON-8
针数:8Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.39
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-N8
JESD-609代码:e3长度:1.95 mm
负载电容(CL):50 pF逻辑集成电路类型:INVERTER
最大I(ol):0.024 A湿度敏感等级:1
功能数量:3输入次数:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC8,.04,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:3.3 V
Prop。Delay @ Nom-Sup:6.7 ns传播延迟(tpd):12 ns
认证状态:Not Qualified施密特触发器:YES
座面最大高度:0.5 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:1 mm
Base Number Matches:1

74LVC3G14GT 数据手册

 浏览型号74LVC3G14GT的Datasheet PDF文件第2页浏览型号74LVC3G14GT的Datasheet PDF文件第3页浏览型号74LVC3G14GT的Datasheet PDF文件第4页浏览型号74LVC3G14GT的Datasheet PDF文件第5页浏览型号74LVC3G14GT的Datasheet PDF文件第6页浏览型号74LVC3G14GT的Datasheet PDF文件第7页 
74LVC3G14  
Triple inverting Schmitt trigger with 5 V tolerant input  
Rev. 03 — 31 January 2005  
Product data sheet  
1. General description  
The 74LVC3G14 is a high-performance, low-power, low-voltage, Si-gate CMOS device  
and superior to most advanced CMOS compatible TTL-families.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this  
device as translator in a mixed 3.3 V and 5 V environment.  
This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry  
disables the output, preventing the damaging backflow current through the device when it  
is powered down.  
The 74LVC3G14 provides three inverting buffers with Schmitt-trigger action. It is capable  
of transforming slowly changing input signals into sharply defined, jitter-free output  
signals.  
2. Features  
Wide supply voltage range from 1.65 V to 5.5 V  
5 V tolerant input/output for interfacing with 5 V logic  
High noise immunity  
ESD protection:  
HBM EIA/JESD22-A114-B exceeds 2000 V  
MM EIA/JESD22-A115-A exceeds 200 V.  
±24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Multiple package options  
Specified from 40 °C to +85 °C and 40 °C to +125 °C.  
3. Applications  
Wave and pulse shaper for highly noisy environment  
Astable multivibrator  
Monostable multivibrator.  

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