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74LVC1G38GW PDF预览

74LVC1G38GW

更新时间: 2024-11-18 11:10:31
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
17页 256K
描述
2-input NAND gate; open drainProduction

74LVC1G38GW 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.18
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-G5
JESD-609代码:e3长度:2.05 mm
逻辑集成电路类型:NAND GATE湿度敏感等级:1
功能数量:1输入次数:2
端子数量:5最高工作温度:125 °C
最低工作温度:-40 °C输出特性:OPEN-DRAIN
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260传播延迟(tpd):12.5 ns
认证状态:Not Qualified座面最大高度:1.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:1.25 mm
Base Number Matches:1

74LVC1G38GW 数据手册

 浏览型号74LVC1G38GW的Datasheet PDF文件第2页浏览型号74LVC1G38GW的Datasheet PDF文件第3页浏览型号74LVC1G38GW的Datasheet PDF文件第4页浏览型号74LVC1G38GW的Datasheet PDF文件第5页浏览型号74LVC1G38GW的Datasheet PDF文件第6页浏览型号74LVC1G38GW的Datasheet PDF文件第7页 
74LVC1G38  
2-input NAND gate; open drain  
Rev. 10 — 12 January 2022  
Product data sheet  
1. General description  
The 74LVC1G38 is a single 2-input NAND gate with open-drain output. Inputs can be driven from  
either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed  
3.3 V and 5 V environments.  
Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.  
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry  
disables the output, preventing the potentially damaging backflow current through the device when  
it is powered down.  
2. Features and benefits  
Wide supply voltage range from 1.65 V to 5.5 V  
5 V tolerant outputs for interfacing with 5 V logic  
High noise immunity  
±24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Open drain outputs  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
Latch-up performance exceeds 250 mA  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8-B/JESD36 (2.7 V to 3.6 V).  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
Multiple package options  
Specified from -40 °C to +125 °C.  
 
 

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