Datasheet > 74LVC1G38GM

74LVC1G38GM

更新时间： 2024-11-20 11:10:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
17页	256K
描述
2-input NAND gate; open drainProduction

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74LVC1G38GM 数据手册

74LVC1G38

2-input NAND gate; open drain

Rev. 10 — 12 January 2022

Product data sheet

1. General description

The 74LVC1G38 is a single 2-input NAND gate with open-drain output. Inputs can be driven from

either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed

3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using I_OFF. The I_OFFcircuitry

disables the output, preventing the potentially damaging backflow current through the device when

it is powered down.

2. Features and benefits

•

Wide supply voltage range from 1.65 V to 5.5 V

•

5 V tolerant outputs for interfacing with 5 V logic

High noise immunity

±24 mA output drive (V_CC= 3.0 V)

CMOS low power consumption

Open drain outputs

Direct interface with TTL levels

Inputs accept voltages up to 5 V

Latch-up performance exceeds 250 mA

Complies with JEDEC standard:

•

JESD8-7 (1.65 V to 1.95 V)

JESD8-5 (2.3 V to 2.7 V)

JESD8-B/JESD36 (2.7 V to 3.6 V).

•

ESD protection:

•

HBM JESD22-A114F exceeds 2000 V

MM JESD22-A115-A exceeds 200 V

•

Multiple package options

Specified from -40 °C to +125 °C.

12 3 4 5 6 7...17

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