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74LVC1G38GM PDF预览

74LVC1G38GM

更新时间: 2024-11-17 05:05:51
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 85K
描述
2-input NAND gate; open drain

74LVC1G38GM 数据手册

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74LVC1G38  
2-input NAND gate; open drain  
Rev. 03 — 27 August 2007  
Product data sheet  
1. General description  
The 74LVC1G38 provides a 2-input NAND function.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this  
device as translator in a mixed 3.3 V and 5 V environment.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing the damaging backflow current through the device  
when it is powered down.  
2. Features  
I Wide supply voltage range from 1.65 V to 5.5 V  
I 5 V tolerant outputs for interfacing with 5 V logic  
I High noise immunity  
I Complies with JEDEC standard:  
N JESD8-7 (1.65 V to 1.95 V)  
N JESD8-5 (2.3 V to 2.7 V)  
N JESD8-B/JESD36 (2.7 V to 3.6 V).  
I ESD protection:  
N HBM JESD22-A114E exceeds 2000 V  
N MM JESD22-A115-A exceeds 200 V  
I ±24 mA output drive (VCC = 3.0 V)  
I CMOS low power consumption  
I Open drain outputs  
I Latch-up performance exceeds 250 mA  
I Direct interface with TTL levels  
I Inputs accept voltages up to 5 V  
I Multiple package options  
I Specified from 40 °C to +125 °C.  

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