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74LVC1G3208DBVRG4 PDF预览

74LVC1G3208DBVRG4

更新时间: 2024-01-30 12:23:18
品牌 Logo 应用领域
德州仪器 - TI 栅极触发器逻辑集成电路光电二极管输入元件PC
页数 文件大小 规格书
16页 599K
描述
SINGLE 3-INPUT POSITIVE OR-AND GATE

74LVC1G3208DBVRG4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:LSSOP, TSOP6,.11,37针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:5.33Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/323773.1.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=323773PCB Footprint:https://componentsearchengine.com/footprint.php?partID=323773
3D View:https://componentsearchengine.com/viewer/3D.php?partID=323773Samacsys PartID:323773
Samacsys Image:https://componentsearchengine.com/Images/9/74LVC1G3208DBVRG4.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/74LVC1G3208DBVRG4.jpg
Samacsys Pin Count:6Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (6-Pin)Samacsys Footprint Name:DBV0006A
Samacsys Released Date:2020-02-27 13:29:46Is Samacsys:N
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-G6
JESD-609代码:e4长度:2.9 mm
负载电容(CL):50 pF逻辑集成电路类型:OR-AND GATE
最大I(ol):0.032 A湿度敏感等级:1
功能数量:1输入次数:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
包装方法:TR峰值回流温度(摄氏度):260
电源:3.3 V最大电源电流(ICC):0.01 mA
Prop。Delay @ Nom-Sup:5.9 ns传播延迟(tpd):17.5 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:1.45 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.6 mm
Base Number Matches:1

74LVC1G3208DBVRG4 数据手册

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SN74LVC1G3208  
SINGLE 3-INPUT POSITIVE OR-AND GATE  
www.ti.com  
SCES605ASEPTEMBER 2004REVISED JUNE 2005  
FEATURES  
Can Be Used in Three Combinations:  
– OR-AND Gate  
Available in the Texas Instruments  
NanoStar™ and NanoFree™ Packages  
– OR Gate  
Supports 5-V VCC Operation  
Inputs Accept Voltages to 5.5 V  
Max tpd of 5 ns at 3.3 V  
– AND Gate  
Ioff Supports Partial-Power-Down Mode  
Operation  
Low Power Consumption, 10-µA Max ICC  
±24-mA Output Drive at 3.3 V  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
ESD Protection Exceeds JESD 22  
– 2000-V Human-Body Model (A114-A)  
– 200-V Machine Model (A115-A)  
Input Hysteresis Allows Slow Input Transition  
and Better Switching Noise Immunity at the  
Input  
(Vhys = 250 mV Typ @ 3.3 V)  
– 1000-V Charged-Device Model (C101)  
DBV PACKAGE  
(TOP VIEW)  
YEP OR YZP PACKAGE  
(BOTTOM VIEW)  
DCK PACKAGE  
(TOP VIEW)  
3
4
Y
V
A
C
1
2
3
6
5
4
B
GND  
A
1
2
3
6
A
GND  
B
C
V
2
1
5
6
CC  
GND  
B
V
Y
CC  
C
5
4
CC  
Y
See mechanical drawings for dimensions.  
DESCRIPTION/ORDERING INFORMATION  
This device is designed for 1.65-V to 5.5-V VCC operation.  
The SN74LVC1G3208 is a single 3-input positive OR-AND gate. It performs the Boolean function Y = (A + B)  
in positive logic.  
C
ORDERING INFORMATION  
TA  
PACKAGE(1)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING(2)  
NanoStar™ – WCSP (DSBGA)  
0.23-mm Large Bump – YEP  
SN74LVC1G3208YEPR  
Reel of 3000  
_ _ _ DD _  
NanoFree™ – WCSP (DSBGA)  
0.23-mm Large Bump – YZP  
(Pb-free)  
SN74LVC1G3208YZPR  
–40°C to 85°C  
Reel of 3000  
Reel of 250  
Reel of 3000  
Reel of 250  
SN74LVC1G3208DBVR  
SN74LVC1G3208DBVT  
SN74LVC1G3208DCKR  
SN74LVC1G3208DCKT  
SOT (SOT-23) – DBV  
SOT (SC-70) – DCK  
CDD_  
DD_  
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
(2) DBV/DCK: The actual top-side marking has one additional character that designates the assembly/test site.  
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following  
character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, = Pb-free).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar, NanoFree are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2004–2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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