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74LVC1G175GW PDF预览

74LVC1G175GW

更新时间: 2024-11-07 11:11:39
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
17页 263K
描述
Single D-type flip-flop with reset; positive-edge triggerProduction

74LVC1G175GW 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SC-88, 6 PINReach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.22
Is Samacsys:N系列:LVC/LCX/Z
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
长度:2 mm逻辑集成电路类型:D FLIP-FLOP
湿度敏感等级:1位数:1
功能数量:1端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
传播延迟(tpd):17 ns认证状态:Not Qualified
座面最大高度:1.1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
触发器类型:POSITIVE EDGE宽度:1.25 mm
最小 fmax:200 MHzBase Number Matches:1

74LVC1G175GW 数据手册

 浏览型号74LVC1G175GW的Datasheet PDF文件第2页浏览型号74LVC1G175GW的Datasheet PDF文件第3页浏览型号74LVC1G175GW的Datasheet PDF文件第4页浏览型号74LVC1G175GW的Datasheet PDF文件第5页浏览型号74LVC1G175GW的Datasheet PDF文件第6页浏览型号74LVC1G175GW的Datasheet PDF文件第7页 
74LVC1G175  
Single D-type flip-flop with reset; positive-edge trigger  
Rev. 10 — 27 January 2022  
Product data sheet  
1. General description  
The 74LVC1G175 is a low-power, low-voltage single positive edge triggered D-type flip-flop with  
individual data (D) input, clock (CP) input, master reset (MR) input, and Q output.  
The master reset (MR) is an asynchronous active LOW input and operates independently of the  
clock input. Information on the data input is transferred to the Q output on the LOW-to-HIGH  
transition of the clock pulse. The D input must be stable one set-up time prior to the LOW-to-HIGH  
clock transition for predictable operation.  
The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device  
in a mixed 3.3 V and 5 V environment.  
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry  
disables the output, preventing the damaging backflow current through the device when it is  
powered down.  
Schmitt trigger action at all inputs makes the circuit highly tolerant of slower input rise and fall  
times.  
2. Features and benefits  
Wide supply voltage range from 1.65 V to 5.5 V  
High noise immunity  
Overvoltage tolerant inputs to 5.5 V  
±24 mA output drive (VCC = 3.0 V)  
CMOS low power dissipation  
Direct interface with TTL levels  
IOFF circuitry provides partial Power-down mode operation  
Latch-up performance exceeds 250 mA  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8C (2.7 V to 3.6 V)  
JESD36 (4.5 V to 5.5 V)  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V.  
Multiple package options  
Specified from -40 °C to +85 °C and -40 °C to +125 °C.  
 
 

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