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74LVC1G00GF PDF预览

74LVC1G00GF

更新时间: 2024-09-15 06:31:55
品牌 Logo 应用领域
恩智浦 - NXP 逻辑集成电路光电二极管
页数 文件大小 规格书
14页 81K
描述
Single 2-input NAND gate

74LVC1G00GF 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 不含铅
是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:VSON, SOLCC6,.04,14
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.36
系列:LVC/LCX/ZJESD-30 代码:S-PDSO-N6
JESD-609代码:e3长度:1 mm
负载电容(CL):50 pF逻辑集成电路类型:NAND GATE
最大I(ol):0.024 A湿度敏感等级:1
功能数量:1输入次数:2
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSON封装等效代码:SOLCC6,.04,14
封装形状:SQUARE封装形式:SMALL OUTLINE, VERY THIN PROFILE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:3.3 VProp。Delay @ Nom-Sup:6 ns
传播延迟(tpd):10.5 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:0.5 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.35 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1 mmBase Number Matches:1

74LVC1G00GF 数据手册

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74LVC1G00  
Single 2-input NAND gate  
Rev. 07 — 17 July 2007  
Product data sheet  
1. General description  
The 74LVC1G00 provides the single 2-input NAND function.  
Input can be driven from either 3.3 V or 5 V devices. These features allow the use of these  
devices in a mixed 3.3 V and 5 V environment.  
Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall  
time.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
2. Features  
Wide supply voltage range from 1.65 V to 5.5 V  
High noise immunity  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8-B/JESD36 (2.7 V to 3.6 V)  
±24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
Multiple package options  
ESD protection:  
HBM JESD22-A114E exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
Specified from 40 °C to +85 °C and 40 °C to +125 °C  

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