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74HCU04DTR2G PDF预览

74HCU04DTR2G

更新时间: 2024-11-29 06:31:55
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
9页 129K
描述
Hex Unbuffered Inverter

74HCU04DTR2G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:LEAD FREE, TSSOP-14
针数:14Reach Compliance Code:unknown
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:6.95Is Samacsys:N
系列:HC/UHJESD-30 代码:R-PDSO-G14
JESD-609代码:e4长度:5 mm
负载电容(CL):50 pF逻辑集成电路类型:INVERTER
最大I(ol):0.004 A湿度敏感等级:1
功能数量:6输入次数:1
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:2/6 VProp。Delay @ Nom-Sup:21 ns
传播延迟(tpd):105 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.2 mm
子类别:Gates最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:4.4 mmBase Number Matches:1

74HCU04DTR2G 数据手册

 浏览型号74HCU04DTR2G的Datasheet PDF文件第2页浏览型号74HCU04DTR2G的Datasheet PDF文件第3页浏览型号74HCU04DTR2G的Datasheet PDF文件第4页浏览型号74HCU04DTR2G的Datasheet PDF文件第5页浏览型号74HCU04DTR2G的Datasheet PDF文件第6页浏览型号74HCU04DTR2G的Datasheet PDF文件第7页 
74HCU04  
Hex Unbuffered Inverter  
HighPerformance SiliconGate CMOS  
The 74HCU04 is identical in pinout to the LS04 and the  
MC14069UB. The device inputs are compatible with standard CMOS  
outputs; with pullup resistors, they are compatible with LSTTL  
outputs.  
This device consists of six singlestage inverters. These inverters  
are well suited for use as oscillators, pulse shapers, and in many other  
applications requiring a highinput impedance amplifier. For digital  
applications, the HC04 is recommended.  
http://onsemi.com  
MARKING  
DIAGRAMS  
14  
SOIC14  
D SUFFIX  
CASE 751A  
HCU04G  
AWLYWW  
Features  
14  
14  
Output Drive Capability: 10 LSTTL Loads  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2.0 to 6.0 V; 2.5 to 6.0 V in Oscillator  
Configurations  
Low Input Current: 1.0 mA  
High Noise Immunity Characteristic of CMOS Devices  
In Compliance With the JEDEC Standard No. 7.0 A Requirements  
1
1
14  
HCU  
04  
TSSOP14  
DT SUFFIX  
CASE 948G  
ALYWG  
1
G
1
ESD Performance: HBM > 2000 V; Machine Model > 200 V  
Chip Complexity: 12 FETs or 3 Equivalent Gates  
These are PbFree Devices  
HCU04 = Specific Device Code  
A
L, WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
W, WW = Work Week  
G or G  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 Rev. 0  
74HCU04/D  

74HCU04DTR2G 替代型号

型号 品牌 替代类型 描述 数据表
MC74HCU04ADTR2G ONSEMI

完全替代

Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS
CD74HCU04PWR TI

类似代替

High-Speed CMOS Logic Hex Inverter
M74HCU04TTR STMICROELECTRONICS

类似代替

HEX INVERTER SINGLE STATE

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