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74HCT14DTR2G PDF预览

74HCT14DTR2G

更新时间: 2024-02-16 21:30:01
品牌 Logo 应用领域
安森美 - ONSEMI 触发器逻辑集成电路光电二极管
页数 文件大小 规格书
8页 125K
描述
Hex Schmitt−Trigger Inverter with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS

74HCT14DTR2G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:TSSOP, TSSOP14,.25
针数:14Reach Compliance Code:unknown
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:7.03系列:HCT
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:5 mm负载电容(CL):50 pF
逻辑集成电路类型:INVERTER最大I(ol):0.004 A
湿度敏感等级:1功能数量:6
输入次数:1端子数量:14
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:5 V
Prop。Delay @ Nom-Sup:4.8 ns传播延迟(tpd):48 ns
认证状态:Not Qualified施密特触发器:YES
座面最大高度:1.2 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:4.4 mm

74HCT14DTR2G 数据手册

 浏览型号74HCT14DTR2G的Datasheet PDF文件第2页浏览型号74HCT14DTR2G的Datasheet PDF文件第3页浏览型号74HCT14DTR2G的Datasheet PDF文件第4页浏览型号74HCT14DTR2G的Datasheet PDF文件第5页浏览型号74HCT14DTR2G的Datasheet PDF文件第6页浏览型号74HCT14DTR2G的Datasheet PDF文件第7页 
74HCT14  
Hex Schmitt−Trigger  
Inverter with LSTTL  
Compatible Inputs  
HighPerformance SiliconGate CMOS  
http://onsemi.com  
MARKING  
The 74HCT14 may be used as a level converter for interfacing TTL  
or NMOS outputs to highspeed CMOS inputs.  
The HCT14 is useful to “square up” slow input rise and fall times.  
Due to the hysteresis voltage of the Schmitt trigger, the HCT14 finds  
applications in noisy environments.  
DIAGRAMS  
14  
SOIC14  
D SUFFIX  
CASE 751A  
Features  
HCT14G  
AWLYWW  
14  
14  
1
Output Drive Capability: 10 LSTTL Loads  
TTL/NMOSCompatible Input Levels  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 4.5 to 5.5 V  
1
14  
HCT  
14  
Low Input Current: 1.0 mA  
TSSOP14  
DT SUFFIX  
CASE 948G  
In Compliance With the JEDEC Standard No. 7A Requirements  
ESD Performance: HBM > 2000 V; Machine Model > 200 V  
Chip Complexity: 72 FETs or 18 Equivalent Gates  
These are PbFree Devices  
ALYW G  
1
G
1
HCT14 = Device Code  
A
L, WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
W, WW = Work Week  
G or G  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 Rev. 1  
74HCT14/D  

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