Datasheet > 74HCT04D

74HCT04D

更新时间： 2024-09-30 14:56:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
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7页	203K
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74HCT04D 技术参数

74HCT04D

CMOS Digital Integrated Circuits Silicon Monolithic

74HCT04D

1. Functional Description

•

Hex Inverter

2. General

The 74HCT04D is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.

It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power

dissipation.

This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs are

compatible with TTL, NMOS and CMOS output voltage levels.

The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and

stable output.

All inputs are equipped with protection circuits against static discharge or transient excess voltage.

3. Features

(1) Wide operating temperature range: Topr = -40 to 125 � (Note 1)

(2) High speed: tpd = 8 ns (typ.) at VCC = 5 V

(3) Low power dissipation: ICC = 1.0 µA (max) at Ta = 25 �

(4) Compatible with TTL outputs: VIH = 2.0 V (min)

: VIL = 0.8 V (max)

(5) Wide interfacing ability: LSTTL, NMOS, CMOS

(6) Balanced propagation delays: tPLH ≈ tPHL

Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after

July 2020.

4. Packaging

SOIC14

Start of commercial production

2020-07

2020-11-17

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7

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