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74HC02D PDF预览

74HC02D

更新时间: 2024-11-25 14:58:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 211K
描述
Not Recommended for New Design

74HC02D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP,Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:1.58
系列:HC/UHJESD-30 代码:R-PDSO-G14
长度:8.65 mm逻辑集成电路类型:NOR GATE
功能数量:4输入次数:2
端子数量:14最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
传播延迟(tpd):95 ns座面最大高度:1.75 mm
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

74HC02D 数据手册

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74HC02D  
CMOS Digital Integrated Circuits Silicon Monolithic  
74HC02D  
1. Functional Description  
Quad 2-Input NOR Gate  
2. General  
The 74HC02D is a high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology.  
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power  
dissipation.  
The internal circuit is composed of 3 stages, including a buffer output, which provide high noise immunity and  
stable output.  
All inputs are equipped with protection circuits against static discharge or transient excess voltage.  
3. Features  
(1) Wide operating temperature range: Topr = -40 to 125 (Note 1)  
(2) High speed: tpd = 6 ns (typ.) at VCC = 5 V  
(3) Low power dissipation: ICC = 1.0 µA (max) at Ta = 25 �  
(4) Balanced propagation delays: tPLH tPHL  
(5) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V  
Note 1: Operating Range spec of Topr = -40 to 125 is applicable only for the products which manufactured after  
July 2020.  
4. Packaging  
SOIC14  
Start of commercial production  
2020-07  
©2016-2020  
2020-10-21  
Rev.3.0  
1
Toshiba Electronic Devices & Storage Corporation  

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