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74CBTLV1G125DBVRE4 PDF预览

74CBTLV1G125DBVRE4

更新时间: 2024-11-05 21:53:35
品牌 Logo 应用领域
德州仪器 - TI 总线驱动器总线收发器开关逻辑集成电路光电二极管
页数 文件大小 规格书
8页 224K
描述
LOW-VOLTAGE SINGLE FET BUS SWITCH

74CBTLV1G125DBVRE4 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT-23
包装说明:LSSOP, TSOP5/6,.11,37针数:5
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:6 weeks风险等级:4.38
Is Samacsys:N控制类型:ENABLE LOW
计数方向:BIDIRECTIONAL系列:CBTLV/3B
JESD-30 代码:R-PDSO-G5JESD-609代码:e4
长度:2.9 mm逻辑集成电路类型:BUS DRIVER
湿度敏感等级:1位数:1
功能数量:1端口数量:2
端子数量:5最高工作温度:85 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP5/6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
包装方法:TR峰值回流温度(摄氏度):260
电源:2.5/3.3 V最大电源电流(ICC):0.01 mA
Prop。Delay @ Nom-Sup:0.25 ns传播延迟(tpd):0.25 ns
认证状态:Not Qualified座面最大高度:1.45 mm
子类别:Bus Driver/Transceivers最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
翻译:N/A宽度:1.6 mm
Base Number Matches:1

74CBTLV1G125DBVRE4 数据手册

 浏览型号74CBTLV1G125DBVRE4的Datasheet PDF文件第2页浏览型号74CBTLV1G125DBVRE4的Datasheet PDF文件第3页浏览型号74CBTLV1G125DBVRE4的Datasheet PDF文件第4页浏览型号74CBTLV1G125DBVRE4的Datasheet PDF文件第5页浏览型号74CBTLV1G125DBVRE4的Datasheet PDF文件第6页浏览型号74CBTLV1G125DBVRE4的Datasheet PDF文件第7页 
ꢀꢁꢂ ꢃ ꢄꢅꢆ ꢇꢈ ꢉꢊ ꢉꢋ ꢌ  
ꢇ ꢍꢎꢏꢈꢍ ꢇꢆꢐꢊ ꢑ ꢀꢒ ꢁꢊ ꢇ ꢑ ꢓ ꢑꢆ ꢅꢔꢀ ꢀ ꢎꢒ ꢆꢄ ꢕ  
SCDS057G − MARCH 1998 − REVISED OCTOBER 2003  
DBV OR DCK PACKAGE  
(TOP VIEW)  
D
D
D
5-Switch Connection Between Two Ports  
Rail-to-Rail Switching on Data I/O Ports  
I
Supports Partial-Power-Down Mode  
OE  
A
V
B
1
2
3
5
4
off  
CC  
Operation  
GND  
description/ordering information  
The SN74CBTLV1G125 features  
a
single  
high-speed line switch. The switch is disabled  
when the output-enable (OE) input is high.  
This device is fully specified for partial-power-down applications using I . The I feature ensures that  
off  
off  
damaging current will not backflow through the device when it is powered down. The device has isolation during  
power off.  
To ensure the high-impedance state during power up or power down, OE should be tied to V  
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.  
through a pullup  
CC  
ORDERING INFORMATION  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
PACKAGE  
T
A
SOT (SOT-23) − DBV Tape and reel SN74CBTLV1G125DBVR  
SOT (SC-70) − DCK Tape and reel SN74CBTLV1G125DCKR  
V25_  
−40°C to 85°C  
VM_  
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines  
are available at www.ti.com/sc/package.  
The actual top-side marking has one additional character that designates the assembly/test site.  
FUNCTION TABLE  
INPUT  
FUNCTION  
OE  
L
A port = B port  
Disconnect  
H
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢆꢤ  
Copyright 2003, Texas Instruments Incorporated  
ꢠ ꢤ ꢡ ꢠꢙ ꢚꢮ ꢜꢛ ꢟ ꢧꢧ ꢥꢟ ꢝ ꢟ ꢞ ꢤ ꢠ ꢤ ꢝ ꢡ ꢩ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

74CBTLV1G125DBVRE4 替代型号

型号 品牌 替代类型 描述 数据表
74CBTLV1G125DBVRG4 TI

完全替代

LOW-VOLTAGE SINGLE FET BUS SWITCH
SN74CBTLV1G125DCKR TI

完全替代

LOW-VOLTAGE SINGLE FET BUS SWITCH
SN74CBTLV1G125DBVR TI

完全替代

LOW-VOLTAGE SINGLE FET BUS SWITCH

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