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74CB3Q3125DBQRE4 PDF预览

74CB3Q3125DBQRE4

更新时间： 2024-11-07 11:08:11
品牌 Logo 应用领域
德州仪器 - TI 开关驱动光电二极管逻辑集成电路总线驱动器总线收发器
页数 文件大小 规格书
12页 301K
描述
3.3V、1:1 (SPST)、4 通道 FET 总线开关 | DBQ | 16 | -40 to 85

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74CB3Q3125DBQRE4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SSOP, SSOP16,.25针数：16
Reach Compliance Code：compliantHTS代码：8542.39.00.01
风险等级：4.19其他特性：ALSO OPERATES WITH 3.3V SUPPLY
控制类型：ENABLE LOW计数方向：BIDIRECTIONAL
系列：CB3Q/3VH/3C/2BJESD-30 代码：R-PDSO-G16
JESD-609代码：e4长度：4.9 mm
逻辑集成电路类型：BUS DRIVER湿度敏感等级：2
位数：1功能数量：4
端口数量：2端子数量：16
最高工作温度：85 °C最低工作温度：-40 °C
输出特性：3-STATE输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：SSOP
封装等效代码：SSOP16,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, SHRINK PITCH包装方法：TR
峰值回流温度（摄氏度）：260电源：2.5/3.3 V
最大电源电流（ICC）：4 mAProp。Delay @ Nom-Sup：0.2 ns
传播延迟（tpd）：0.2 ns认证状态：Not Qualified
座面最大高度：1.75 mm子类别：Bus Driver/Transceivers
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：0.64 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED翻译：N/A
宽度：3.9 mmBase Number Matches：1

74CB3Q3125DBQRE4 数据手册

 浏览型号74CB3Q3125DBQRE4的Datasheet PDF文件第2页浏览型号74CB3Q3125DBQRE4的Datasheet PDF文件第3页浏览型号74CB3Q3125DBQRE4的Datasheet PDF文件第4页浏览型号74CB3Q3125DBQRE4的Datasheet PDF文件第5页浏览型号74CB3Q3125DBQRE4的Datasheet PDF文件第6页浏览型号74CB3Q3125DBQRE4的Datasheet PDF文件第7页 
SN74CB3Q3125  
QUADRUPLE FET BUS SWITCH  
2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS143B–OCTOBER 2003–REVISED MARCH 2005  
FEATURES  
•
•
Data and Control Inputs Provide Undershoot  
Clamp Diodes  
(1)  
•
High-Bandwidth Data Path (up to 500 MHz  
)
Low Power Consumption  
(ICC = 0.3 mA Typ)  
•
5-V Tolerant I/Os With Device Powered Up or  
Powered Down  
•
•
VCC Operating Range From 2.3 V to 3.6 V  
•
•
Low and Flat ON-State Resistance (ron)  
Characteristics Over Operating Range  
(ron = 3 Ω Typ)  
Data I/Os Support 0- to 5-V Signaling Levels  
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)  
Rail-to-Rail Switching on Data I/O Ports  
– 0- to 5-V Switching With 3.3-V VCC  
– 0- to 3.3-V Switching With 2.5-V VCC  
•
•
•
•
Control Inputs Can Be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
Ioff Supports Partial-Power-Down Mode  
Operation  
•
•
Bidirectional Data Flow With Near-Zero  
Propagation Delay  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
(Cio(OFF) = 4 pF Typ)  
ESD Performance Tested Per JESD 22  
– 2000-V Human-Body Model  
(A114-B, Class II)  
•
Fast Switching Frequency (fOE = 20 MHz Max)  
– 1000-V Charged-Device Model (C101)  
•
Supports Both Digital and Analog  
Applications: USB Interface, Differential  
Signal Interface, Bus Isolation, Low-Distortion  
Signal Gating  
(1) For additional information regarding the performance  
characteristics of the CB3Q family, refer to the TI application  
report, CBT-C, CB3T, and CB3Q Signal-Switch Families,  
literature number SCDA008.  
DGV OR PW PACKAGE  
(TOP VIEW)  
DBQ PACKAGE  
(TOP VIEW)  
RGY PACKAGE  
(TOP VIEW)  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
V
4OE  
4A  
4B  
3OE  
3A  
1OE  
1A  
V
4OE  
4A  
4B  
3OE  
3A  
NC  
1OE  
1A  
1B  
2OE  
2A  
CC  
CC  
1
14  
1B  
2OE  
2A  
2B  
GND  
1A  
1B  
13 4OE  
2
3
4
5
6
12  
11  
10  
9
4A  
2OE  
2A  
4B  
3OE  
3A  
8
3B  
3B  
2B  
2B  
NC  
GND  
7
8
NC - No internal connection  
DESCRIPTION/ORDERING INFORMATION  
The SN74CB3Q3125 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of  
the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows  
for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device  
also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.  
Specifically designed to support high-bandwidth applications, the SN74CB3Q3125 provides an optimized  
interface solution ideally suited for broadband communications, networking, and data-intensive computing  
systems.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2003–2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1234567...12

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