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74AUP1T45GW PDF预览

74AUP1T45GW

更新时间: 2024-02-27 06:12:28
品牌 Logo 应用领域
恩智浦 - NXP 总线驱动器总线收发器逻辑集成电路光电二极管
页数 文件大小 规格书
33页 167K
描述
Low-power dual supply translating transceiver; 3-state

74AUP1T45GW 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
风险等级:5.63其他特性:WITH DIRECTION CONTROL
系列:AUP/ULP/VJESD-30 代码:R-PDSO-G6
JESD-609代码:e3长度:2 mm
逻辑集成电路类型:BUS TRANSCEIVER湿度敏感等级:1
位数:1功能数量:1
端口数量:2端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260传播延迟(tpd):40.5 ns
座面最大高度:1.1 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):1.1 V标称供电电压 (Vsup):1.4 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1.25 mmBase Number Matches:1

74AUP1T45GW 数据手册

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74AUP1T45  
Low-power dual supply translating transceiver; 3-state  
Rev. 01 — 18 October 2006  
Product data sheet  
1. General description  
The 74AUP1T45 is a high-performance, low-power, low-voltage, Si-gate CMOS device,  
superior to most advanced CMOS compatible TTL families.  
The 74AUP1T45 is a single bit transceiver featuring two data input-outputs (A and B), a  
direction control input (DIR) and dual supply pins (VCC(A) and VCC(B)) which enable  
bidirectional level translation. Both VCC(A) and VCC(B) can be supplied at any voltage  
between 1.1 V and 3.6 V making the device suitable for interfacing between any of the low  
voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins A and DIR are referenced to  
VCC(A) and pin B is referenced to VCC(B). A HIGH on DIR allows transmission from A to B  
and a LOW on DIR allows transmission from B to A.  
Schmitt trigger action on all inputs makes the circuit tolerant of slower input rise and fall  
times across the entire VCC(A) and VCC(B) ranges. The device ensures low static and  
dynamic power consumption and is fully specified for partial power-down applications  
using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow  
current through the device when it is powered down. In suspend mode when either VCC(A)  
or VCC(B) are at GND, both A and B are in the high-impedance OFF-state.  
2. Features  
I Wide supply voltage range:  
N VCC(A): 1.1 V to 3.6 V  
N VCC(B): 1.1 V to 3.6 V  
I High noise immunity  
I Complies with JEDEC standards:  
N JESD8-7 (1.2 V to 1.95 V)  
N JESD8-5 (1.8 V to 2.7 V)  
N JESD8-B (2.7 V to 3.6 V)  
I ESD protection:  
N HBM JESD22-A114-D Class 3A exceeds 5000 V  
N MM JESD22-A115-A exceeds 200 V  
N CDM JESD22-C101-C exceeds 1000 V  
I Low static power consumption; ICC = 0.9 µA (maximum)  
I Suspend mode  
I Latch-up performance exceeds 100 mA per JESD 78 Class II  
I Inputs accept voltages up to 3.6 V  
I Low noise overshoot and undershoot < 10 % of VCC  
I IOFF circuitry provides partial Power-down mode operation  

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