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74AUP1G32GW/DG,125 PDF预览

74AUP1G32GW/DG,125

更新时间: 2024-01-10 04:51:20
品牌 Logo 应用领域
恩智浦 - NXP 输入元件光电二极管逻辑集成电路
页数 文件大小 规格书
21页 347K
描述
IC AUP/ULP/V SERIES, 2-INPUT OR GATE, PDSO5, 1.25 MM, PLASTIC, MO-203, SC-88A, SOT-353-1, TSSOP-5, Gate

74AUP1G32GW/DG,125 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOT
包装说明:TSSOP,针数:5
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.14系列:AUP/ULP/V
JESD-30 代码:R-PDSO-G5JESD-609代码:e3
长度:2.05 mm逻辑集成电路类型:OR GATE
湿度敏感等级:1功能数量:1
输入次数:2端子数量:5
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260传播延迟(tpd):23.7 ns
认证状态:Not Qualified座面最大高度:1.1 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.8 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:TIN端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:1.25 mm
Base Number Matches:1

74AUP1G32GW/DG,125 数据手册

 浏览型号74AUP1G32GW/DG,125的Datasheet PDF文件第2页浏览型号74AUP1G32GW/DG,125的Datasheet PDF文件第3页浏览型号74AUP1G32GW/DG,125的Datasheet PDF文件第4页浏览型号74AUP1G32GW/DG,125的Datasheet PDF文件第5页浏览型号74AUP1G32GW/DG,125的Datasheet PDF文件第6页浏览型号74AUP1G32GW/DG,125的Datasheet PDF文件第7页 
74AUP1G32  
Low-power 2-input OR-gate  
Rev. 7 — 8 July 2013  
Product data sheet  
1. General description  
The 74AUP1G32 provides the single 2-input OR function.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Low static power consumption; ICC = 0.9 A (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial power-down mode operation  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C  
 
 

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