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74AUP1G32GS,132 PDF预览

74AUP1G32GS,132

更新时间: 2024-01-05 01:02:41
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
21页 347K
描述
74AUP1G32 - Low-power 2-input OR-gate

74AUP1G32GS,132 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred包装说明:1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, SON-6
Reach Compliance Code:compliant风险等级:5.76
Base Number Matches:1

74AUP1G32GS,132 数据手册

 浏览型号74AUP1G32GS,132的Datasheet PDF文件第2页浏览型号74AUP1G32GS,132的Datasheet PDF文件第3页浏览型号74AUP1G32GS,132的Datasheet PDF文件第4页浏览型号74AUP1G32GS,132的Datasheet PDF文件第5页浏览型号74AUP1G32GS,132的Datasheet PDF文件第6页浏览型号74AUP1G32GS,132的Datasheet PDF文件第7页 
74AUP1G32  
Low-power 2-input OR-gate  
Rev. 7 — 8 July 2013  
Product data sheet  
1. General description  
The 74AUP1G32 provides the single 2-input OR function.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Low static power consumption; ICC = 0.9 A (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial power-down mode operation  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C  
 
 

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