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74AUP1G175 PDF预览

74AUP1G175

更新时间: 2024-11-05 04:00:55
品牌 Logo 应用领域
恩智浦 - NXP 线路驱动器或接收器驱动程序和接口接口集成电路
页数 文件大小 规格书
26页 92K
描述
Low-power D-type flip-flop with reset; positive-edge trigger

74AUP1G175 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.57Is Samacsys:N
接口集成电路类型:LINE DRIVERBase Number Matches:1

74AUP1G175 数据手册

 浏览型号74AUP1G175的Datasheet PDF文件第2页浏览型号74AUP1G175的Datasheet PDF文件第3页浏览型号74AUP1G175的Datasheet PDF文件第4页浏览型号74AUP1G175的Datasheet PDF文件第5页浏览型号74AUP1G175的Datasheet PDF文件第6页浏览型号74AUP1G175的Datasheet PDF文件第7页 
74AUP1G175  
Low-power D-type flip-flop with reset; positive-edge trigger  
Rev. 01.mm — 27 March 2006  
Preliminary data sheet  
1. General description  
The 74AUP1G175 is a high-performance, low-power, low-voltage, Si-gate CMOS device,  
superior to most advanced CMOS compatible TTL families.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
The 74AUP1G175 is a single positive edge triggered D-type flip-flop with individual  
data (D) input, clock (CP) input, master reset (MR) input, and Q output.The master reset  
(MR) is an asynchronous active LOW input and operates independently of the clock input.  
Information on the data input is transferred to the Q output on the LOW-to-HIGH transition  
of the clock pulse. The D input must be stable one set-up time prior to the LOW-to-HIGH  
clock transition, for predictable operation.  
2. Features  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114-C Class 3A. Exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101-C exceeds 1000 V  
Low static power consumption; ICC = 0.9 µA (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  

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