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74AUP1G0832GS PDF预览

74AUP1G0832GS

更新时间: 2024-01-15 18:51:30
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
19页 71K
描述
AUP/ULP/V SERIES, 3-INPUT AND-OR GATE, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, 0.35 MM PITCH, SOT-1202, SON-6

74AUP1G0832GS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-363
包装说明:PLASTIC, SOT-363, SC-88, 6 PIN针数:6
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.33Is Samacsys:N
系列:AUP/ULP/VJESD-30 代码:R-PDSO-G6
JESD-609代码:e3长度:2 mm
负载电容(CL):30 pF逻辑集成电路类型:AND-OR GATE
最大I(ol):0.0017 A湿度敏感等级:1
功能数量:1输入次数:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP6,.08
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:1.2/3.3 VProp。Delay @ Nom-Sup:21.8 ns
传播延迟(tpd):21.8 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.1 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1.25 mmBase Number Matches:1

74AUP1G0832GS 数据手册

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74AUP1G0832  
Low-power 3-input AND-OR gate  
Rev. 01.00 — 26 January 2006  
Preliminary data sheet  
1. General description  
The 74AUP1G0832 is a high-performance, low-power, low-voltage, Si-gate CMOS device,  
superior to most advanced CMOS compatible TTL families.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
The 74AUP1G0832 provides the Boolean function: Y = (A × B) + C. The user can choose  
the logic functions OR, AND and AND-OR. All inputs can be connected to VCC or GND.  
2. Features  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114-C Class 3A. Exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101-C exceeds 1000 V  
Low static power consumption; ICC = 0.9 µA (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  
Multiple package options  
Specified from 40 °C to +85 °C and 40 °C to +125 °C  

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