是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TSSOT | 包装说明: | TSSOP, TSSOP5/6,.08 |
针数: | 5 | Reach Compliance Code: | compliant |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.16 |
Is Samacsys: | N | 系列: | AUP/ULP/V |
JESD-30 代码: | R-PDSO-G5 | JESD-609代码: | e3 |
长度: | 2.05 mm | 负载电容(CL): | 30 pF |
逻辑集成电路类型: | NAND GATE | 最大I(ol): | 0.0017 A |
湿度敏感等级: | 1 | 功能数量: | 1 |
输入次数: | 2 | 端子数量: | 5 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP5/6,.08 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 包装方法: | TAPE AND REEL |
峰值回流温度(摄氏度): | 260 | 电源: | 1.2/3.3 V |
Prop。Delay @ Nom-Sup: | 24.9 ns | 传播延迟(tpd): | 24.9 ns |
认证状态: | Not Qualified | 施密特触发器: | NO |
座面最大高度: | 1.1 mm | 子类别: | Gates |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 0.8 V |
标称供电电压 (Vsup): | 1.1 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 1.25 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
74AUP1G00FW4-7 | DIODES |
获取价格 |
SINGLE 2 INPUT POSITIVE NAND GATE |
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74AUP1G00FZ4-7 | DIODES |
获取价格 |
SINGLE 2 INPUT POSITIVE NAND GATE |
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74AUP1G00GF | NXP |
获取价格 |
Low-power 2-input NAND gate |
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74AUP1G00GF,132 | NXP |
获取价格 |
74AUP1G00 - Low-power 2-input NAND gate SON 6-Pin |
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74AUP1G00GM | NXP |
获取价格 |
Low-power 2-input NAND gate |
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74AUP1G00GM | NEXPERIA |
获取价格 |
Low-power 2-input NAND gateProduction |
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74AUP1G00GN | NXP |
获取价格 |
AUP/ULP/V SERIES, 2-INPUT NAND GATE, PDSO6, 0.90 X 1 MM, 0.35 MM HEIGHT, SOT-1115, SON-6 |
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74AUP1G00GN | NEXPERIA |
获取价格 |
Low-power 2-input NAND gateProduction |
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74AUP1G00GS | NEXPERIA |
获取价格 |
Low-power 2-input NAND gateProduction |
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74AUP1G00GW | NXP |
获取价格 |
Low-power 2-input NAND gate |
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