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74AHCT1G79GV-Q100 PDF预览

74AHCT1G79GV-Q100

更新时间: 2024-10-29 02:56:59
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
14页 721K
描述
Single D-type flip-flop; positive-edge trigger

74AHCT1G79GV-Q100 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.62
Is Samacsys:N系列:AHCT/VHCT/VT
JESD-30 代码:R-PDSO-G5长度:2.9 mm
逻辑集成电路类型:D FLIP-FLOP湿度敏感等级:1
位数:1功能数量:1
端子数量:5最高工作温度:125 °C
最低工作温度:-40 °C输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):NOT SPECIFIED传播延迟(tpd):11 ns
筛选级别:AEC-Q100座面最大高度:1.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发器类型:POSITIVE EDGE宽度:1.5 mm
最小 fmax:70 MHzBase Number Matches:1

74AHCT1G79GV-Q100 数据手册

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74AHC1G79-Q100;  
74AHCT1G79-Q100  
Single D-type flip-flop; positive-edge trigger  
Rev. 2 — 23 September 2014  
Product data sheet  
1. General description  
74AHC1G79-Q100 and 74AHCT1G79-Q100 are high-speed Si-gate CMOS devices.  
They provide a single positive-edge triggered D-type flip-flop.  
Information on the data input is transferred to the Q output on the LOW-to-HIGH transition  
of the clock pulse. The D input must be stable one set-up time prior to the LOW-to-HIGH  
clock transition for predictable operation.  
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.  
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Symmetrical output impedance  
High noise immunity  
Low power dissipation  
Balanced propagation delays  
SOT353-1 and SOT753 package options  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 )  

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